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부품번호 | BUK962R5-60E 기능 |
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기능 | N-channel TrenchMOS logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
BUK962R5-60E
N-channel TrenchMOS logic level FET
Rev. 2 — 16 May 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This
product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding
environments due to 175 °C rating
True logic level gate with VGS(th)
rating of greater than 0.5V at 175 °C
1.3 Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 5 V; Tmb = 25 °C; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 11
VGS = 5 V; ID = 25 A; VDS = 48 V;
see Figure 13; see Figure 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 60 V
[1] - - 120 A
- - 357 W
- 2 2.5 mΩ
- 41.2 - nC
NXP Semiconductors
BUK962R5-60E
N-channel TrenchMOS logic level FET
300
ID
(A)
240
180
120
60
(1)
003aag344
120
Pder
(%)
80
40
03aa16
0
0 50 100 150 200
Tmb(°C)
0
0 50 100 150 200
Tmb (°C)
(1) Capped at 120A due to package
Fig 1. Continuous drain current as a function of
mounting base temperature
103
IAL
(A)
102
10
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aag355
(1)
(2)
(3)
10-1
10-3
10-2
10-1
1 10
tAL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK962R5-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
4 of 14
4페이지 NXP Semiconductors
BUK962R5-60E
N-channel TrenchMOS logic level FET
300
ID
(A)
240
VGS (V) =10.0 5.0 3.5
003aag346
3.0
180
2.8
120
60
0
0 0.5
Tj = 25 °C; tp = 300 μs
2.6
2.4
1 1.5
VDS (V)
10
RDSon
(mΩ)
7.5
003aag351
5
2.5
0
0 2 4 6 8 10
VGS (V)
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
400
ID
(A)
300
003aag347
200
100
Tj = 175 °C
Tj = 25 °C
3
VGS(th)
(V)
2.5
2
1.5
1
0.5
max
typ
min
003aah025
0
0246
VGS (V)
0
-60 0 60 120 180
Tj (°C)
Fig 8. Transfer characteristics: drain current as a
Fig 9. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
BUK962R5-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
7 of 14
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BUK962R5-60E | N-channel TrenchMOS logic level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |