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BUK762R4-60E PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK762R4-60E
기능 N-channel TrenchMOS standard level FET
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BUK762R4-60E 데이터시트, 핀배열, 회로
BUK762R4-60E
N-channel TrenchMOS standard level FET
Rev. 2 — 16 May 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding
environments due to 175 °C rating
True standard level gate with VGS(th)
rating of greater than 1V at 175 °C
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
Conditions
Tj 25 °C; Tj 175 °C
VGS = 10 V; Tmb = 25 °C; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11
ID = 25 A; VDS = 48 V; VGS = 10 V;
see Figure 13; see Figure 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 60 V
[1] - - 120 A
- - 357 W
- 1.9 2.4 m
- 45.5 - nC




BUK762R4-60E pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK762R4-60E
N-channel TrenchMOS standard level FET
300
ID
(A)
240
180
120
60
0
0
003aaf491
(1)
50 100 150 200
Tmb (°C)
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
IAL
(A)
102
10
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aag355
(1)
(2)
(3)
10-1
10-3
10-2
10-1
1 10
tAL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK762R4-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
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BUK762R4-60E 전자부품, 판매, 대치품
NXP Semiconductors
BUK762R4-60E
N-channel TrenchMOS standard level FET
300
ID
(A)
250
200
VGS (V) = 20
10 7
003aaf494
6
5.5
5.0
8
RDSon
(mΩ)
6
003aaf499
150 4
100 4.5
2
50
0
0
0.25
0.5
Tj = 25 °C; tp = 300 μs
0.75
1
VDS (V)
0
0 5 10 15 20
VGS (V)
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
400
ID
(A)
300
200
003aaf495
5
VGS(th)
(V)
4
3
2
003aah027
max
typ
min
100
Tj = 175 °C
Tj = 25 °C
1
0
02468
VGS (V)
0
-60 0 60 120 180
Tj (°C)
Fig 8. Transfer characteristics: drain current as a
Fig 9. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
BUK762R4-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
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BUK762R4-60E

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

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