Datasheet.kr   

BUK764R0-55B PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK764R0-55B
기능 N-channel TrenchMOS standard level FET
제조업체 NXP Semiconductors
로고 NXP Semiconductors 로고 



전체 14 페이지

		

No Preview Available !

BUK764R0-55B 데이터시트, 핀배열, 회로
BUK764R0-55B
N-channel TrenchMOS standard level FET
Rev. 5 — 22 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Low conduction losses due to low
on-state resistance
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A;
resistance
Tj = 25 °C; see Figure 7;
see Figure 12
Min Typ Max Unit
- - 55 V
[1] - - 75 A
- - 300 W
- 3.4 4 m




BUK764R0-55B pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK764R0-55B
N-channel TrenchMOS standard level FET
200
ID
(A)
150
001aaf871
100
(1)
50
0
25 75 125 175
Tmb (°C)
(1) Capped at 75 A due to package.
Fig 1. Continuous drain current as a function of
mounting base temperature.
102
IAL
(A)
10
1
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aab677
(1)
(2)
(3)
10-1
10-3
10-2
10-1
1 tAL (ms) 10
(1) Single-pulse; Tj = 25 °C.
(2) Single-pulse; Tj = 150 °C.
(3) Repetitive
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time.
BUK764R0-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 22 April 2011
© NXP B.V. 2011. All rights reserved.
4 of 14

4페이지










BUK764R0-55B 전자부품, 판매, 대치품
NXP Semiconductors
BUK764R0-55B
N-channel TrenchMOS standard level FET
300
ID 20
(A) 10
250
7 6.5
200
6
03nh22
5.5
150
5
100
4.5
50
VGS (V) = 4
0
0 2 4 6 8 10
VDS (V)
7
RDSon
(m Ω)
6
5
4
3
5
03nh21
10 15 20
VGS (V)
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
101
ID
(A)
102
103
104
105
03aa35
min typ max
120
gfs
(S)
100
80
60
40
20
03nh19
106
0246
VGS (V)
0
0 20 40 ID (A) 60
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
Fig 9. Forward transconductance as a function of
drain current; typical values
BUK764R0-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 22 April 2011
© NXP B.V. 2011. All rights reserved.
7 of 14

7페이지



구       성총 14 페이지
다운로드[ BUK764R0-55B.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
BUK764R0-55B

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵