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부품번호 | BUK966R5-60E 기능 |
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기능 | N-channel TrenchMOS logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 12 페이지수
BUK966R5-60E
N-channel TrenchMOS logic level FET
13 July 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
• AEC Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C
1.3 Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
[1]
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 25 A; VDS = 48 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 60 V
- - 75 A
- - 182 W
- 5.34 6.5 mΩ
- 16.6 - nC
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NXP Semiconductors
BUK966R5-60E
N-channel TrenchMOS logic level FET
103
ID
(A)
102
10
1
Limit RDSon= VDS/ ID
DC
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tp =10 µ s
100 µ s
1 ms
10 ms
100 ms
10-1
10-1
1
10
VDS(V)
102
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
minimum footprint ; mounted on a
printed-circuit board
1
δ = 0.5
Zth(j-mb)
(K/W) 0.2
10-1 0.1
0.05
0.02
10-2 single shot
Min Typ Max Unit
- - 0.82 K/W
- 50 - K/W
003aah708
P
δ=
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
10-1 tp (s)
t
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK966R5-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
© NXP B.V. 2012. All rights reserved
4 / 12
4페이지 NXP Semiconductors
BUK966R5-60E
N-channel TrenchMOS logic level FET
10-1
ID
(A)
10-2
10-3
10-4
10-5
003aah026
min typ max
15
RDSon
(mΩ)
10
2.8 3
5
003aah940
3.5
4.5
VGS(V) = 10
10-6
0123
VGS (V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
0 60 120 ID(A) 180
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
2.4
a
1.8
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1.2
0.6
0
-60 0 60 120 180
Tj (°C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig. 13. Gate charge waveform definitions
BUK966R5-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
© NXP B.V. 2012. All rights reserved
7 / 12
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