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BUK966R5-60E 데이터시트 PDF




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부품번호 BUK966R5-60E 기능
기능 N-channel TrenchMOS logic level FET
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BUK966R5-60E 데이터시트, 핀배열, 회로
BUK966R5-60E
N-channel TrenchMOS logic level FET
13 July 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C
1.3 Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
[1]
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 25 A; VDS = 48 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 60 V
- - 75 A
- - 182 W
- 5.34 6.5 mΩ
- 16.6 - nC
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BUK966R5-60E pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK966R5-60E
N-channel TrenchMOS logic level FET
103
ID
(A)
102
10
1
Limit RDSon= VDS/ ID
DC
003aah932
tp =10 µ s
100 µ s
1 ms
10 ms
100 ms
10-1
10-1
1
10
VDS(V)
102
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
minimum footprint ; mounted on a
printed-circuit board
1
δ = 0.5
Zth(j-mb)
(K/W) 0.2
10-1 0.1
0.05
0.02
10-2 single shot
Min Typ Max Unit
- - 0.82 K/W
- 50 - K/W
003aah708
P
δ=
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
10-1 tp (s)
t
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK966R5-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
© NXP B.V. 2012. All rights reserved
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BUK966R5-60E 전자부품, 판매, 대치품
NXP Semiconductors
BUK966R5-60E
N-channel TrenchMOS logic level FET
10-1
ID
(A)
10-2
10-3
10-4
10-5
003aah026
min typ max
15
RDSon
(mΩ)
10
2.8 3
5
003aah940
3.5
4.5
VGS(V) = 10
10-6
0123
VGS (V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
0 60 120 ID(A) 180
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
2.4
a
1.8
003aag821
1.2
0.6
0
-60 0 60 120 180
Tj (°C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig. 13. Gate charge waveform definitions
BUK966R5-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
© NXP B.V. 2012. All rights reserved
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BUK966R5-60E

N-channel TrenchMOS logic level FET

NXP Semiconductors
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