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부품번호 | BUK7606-55B 기능 |
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기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
BUK7606-55B
N-channel TrenchMOS standard level FET
Rev. 02 — 21 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
NXP Semiconductors
BUK7606-55B
N-channel TrenchMOS standard level FET
150
ID
(A)
100
03nl98
Capped at 75 A due to package
50
120
Pder
(%)
80
40
03na19
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
103
ID
(A)
102
10
Limit RDSon = VDS/ID
Capped at 75 A due to package
DC
03nl96
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
1
10−1
1
10 102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7606-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 June 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
4페이지 NXP Semiconductors
BUK7606-55B
N-channel TrenchMOS standard level FET
350
ID
(A)
280
20
10
98
7.5
210
140
70
0
024
03nl93
Label is VGS (V)
7
6.5
6
5.5
5
4.5
6
8 10
VDS (V)
12
RDSon
(mΩ)
10
8
6
4
5
03nl92
10 15 20
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10−1
ID
(A)
10−2
10−3
10−4
03aa35
min typ max
80
gfs
(S)
60
40
03nl90
10−5
20
10−6
0246
VGS (V)
0
0 20 40 60
ID (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7606-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 June 2010
© NXP B.V. 2010. All rights reserved.
7 of 14
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부품번호 | 상세설명 및 기능 | 제조사 |
BUK7606-55A | N-channel TrenchMOS standard level FET | NXP Semiconductors |
BUK7606-55B | N-channel TrenchMOS standard level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |