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부품번호 | BUK9608-55B 기능 |
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기능 | N-channel TrenchMOS logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
BUK9608-55B
N-channel TrenchMOS logic level FET
Rev. 04 — 4 May 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
Min Typ Max Unit
- - 55 V
[1] - - 75 A
- - 203 W
- 6.2 7 mΩ
- 7.1 8.4 mΩ
NXP Semiconductors
BUK9608-55B
N-channel TrenchMOS logic level FET
120
ID
(A)
80
03nn57
Capped at 75 A due to package
120
Pder
(%)
80
03na19
40 40
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
Limit RDSon = VDS/ID
102
Capped at 75 A due to package
10
1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03nn55
DC
10
tp = 10 μ s
100 μ s
1 ms
10 ms
100 ms
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9608-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 4 May 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
4페이지 NXP Semiconductors
BUK9608-55B
N-channel TrenchMOS logic level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs;
Qr
recovered charge
VGS = -10 V; VDS = 30 V; Tj = 25 °C
300
ID
(A)
200
5
10
100
0
02
03nn52
4.8 Label is VGS (V)
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
46
8 10
VDS (V)
25
RDSon
(mΩ)
20
15
10
5
0
0
Min Typ Max Unit
- 0.85 1.2 V
- 69 - ns
- 72 - nC
03nn51
5 10 15
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10−1
ID
(A)
10−2
10−3
03ng53
min typ max
120
gfs
(S)
80
03nn49
10−4
10−5
40
10−6
0123
VGS (V)
0
0 25 50 75 100
ID (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK9608-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 4 May 2010
© NXP B.V. 2010. All rights reserved.
7 of 14
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부품번호 | 상세설명 및 기능 | 제조사 |
BUK9608-55 | TrenchMOS transistor Logic level FET | NXP Semiconductors |
BUK9608-55 | TrenchMOS transistor Logic level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |