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BUK9608-55B 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BUK9608-55B은 전자 산업 및 응용 분야에서
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부품번호 BUK9608-55B 기능
기능 N-channel TrenchMOS logic level FET
제조업체 NXP Semiconductors
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BUK9608-55B 데이터시트, 핀배열, 회로
BUK9608-55B
N-channel TrenchMOS logic level FET
Rev. 04 — 4 May 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for logic level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
Min Typ Max Unit
- - 55 V
[1] - - 75 A
- - 203 W
- 6.2 7 m
- 7.1 8.4 m




BUK9608-55B pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK9608-55B
N-channel TrenchMOS logic level FET
120
ID
(A)
80
03nn57
Capped at 75 A due to package
120
Pder
(%)
80
03na19
40 40
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
Limit RDSon = VDS/ID
102
Capped at 75 A due to package
10
1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03nn55
DC
10
tp = 10 μ s
100 μ s
1 ms
10 ms
100 ms
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9608-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 4 May 2010
© NXP B.V. 2010. All rights reserved.
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BUK9608-55B 전자부품, 판매, 대치품
NXP Semiconductors
BUK9608-55B
N-channel TrenchMOS logic level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs;
Qr
recovered charge
VGS = -10 V; VDS = 30 V; Tj = 25 °C
300
ID
(A)
200
5
10
100
0
02
03nn52
4.8 Label is VGS (V)
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
46
8 10
VDS (V)
25
RDSon
(mΩ)
20
15
10
5
0
0
Min Typ Max Unit
- 0.85 1.2 V
- 69 - ns
- 72 - nC
03nn51
5 10 15
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
101
ID
(A)
102
103
03ng53
min typ max
120
gfs
(S)
80
03nn49
104
105
40
106
0123
VGS (V)
0
0 25 50 75 100
ID (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK9608-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 4 May 2010
© NXP B.V. 2010. All rights reserved.
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관련 데이터시트

부품번호상세설명 및 기능제조사
BUK9608-55

TrenchMOS transistor Logic level FET

NXP Semiconductors
NXP Semiconductors
BUK9608-55

TrenchMOS transistor Logic level FET

NXP Semiconductors
NXP Semiconductors

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