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PDF BUK7607-55B Data sheet ( Hoja de datos )
| Número de pieza | BUK7607-55B | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7607-55B
N-channel TrenchMOS standard level FET
Rev. 2 — 26 July 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 55 V
ID drain current
VGS = 10 V; Tmb = 25 °C; [1] - - 75 A
see Figure 1; see Figure 3
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 203 W
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
- 5.8 7.1 mΩ
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup ≤ 55 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
- - 351 mJ
QGD
gate-drain charge
VGS = 10 V; ID = 25 A;
VDS = 44 V; Tj = 25 °C;
see Figure 13
- 17 - nC
[1] Continuous current is limited by package.
1 page  
NXP Semiconductors
BUK7607-55B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 4
minimum footprint; mounted on
a printed-circuit board
Min Typ Max Unit
- - 0.74 K/W
- 50 - K/W
03nn67
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10-1 0.1
0.05
0.02
10-2
P
tp
δ=
T
single shot
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
10-1 tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7607-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK7607-55B
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK7607-55B v.2
Modifications:
20110726
Product data sheet
-
BUK75_7607_55B_1
• Type number BUK7607-55B separated from data sheet BUK75_7607_55B_1.
• The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
BUK75_7607_55B_1 20030515
(9397 750 11235)
Product data
-
-
BUK7607-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
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