BUK969R0-60E Datasheet PDF - NXP Semiconductors
| Part Number | BUK969R0-60E | |
| Description | N-channel TrenchMOS logic level FET | |
| Manufacturers | NXP Semiconductors | |
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BUK969R0-60E
N-channel TrenchMOS logic level FET
13 July 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
• AEC Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C
1.3 Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
[1]
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 20 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 20 A; VDS = 48 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 60 V
- - 75 A
- - 137 W
-
7.53 9
mΩ
- 9.7 - nC
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NXP Semiconductors
BUK969R0-60E
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9
IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 175 °C
IGSS gate leakage current VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 20 A; Tj = 25 °C; Fig. 11
VGS = 10 V; ID = 20 A; Tj = 25 °C;
Fig. 11
VGS = 5 V; ID = 20 A; Tj = 175 °C;
Fig. 12; Fig. 11
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
ID = 20 A; VDS = 48 V; VGS = 5 V;
Fig. 13; Fig. 14
QGD gate-drain charge
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 15
Crss reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 45 V; RL = 2 Ω; VGS = 5 V;
RG(ext) = 5 Ω
td(off)
turn-off delay time
tf fall time
LD
internal drain
from upper edge of drain mounting
inductance
base to center of die
LS
internal source
from source lead to source bonding
inductance
pad
BUK969R0-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
Min Typ Max Unit
60 - - V
54 - - V
1.4 1.7 2.1 V
- - 2.45 V
0.5 - - V
-
0.04 1
µA
- - 500 µA
- 2 100 nA
- 2 100 nA
-
7.53 9
mΩ
-
6.74 8
mΩ
- - 19.8 mΩ
- 29.8 - nC
- 7.9 - nC
- 9.7 - nC
- 3263 4350 pF
- 305 366 pF
- 160 219 pF
- 21 - ns
- 56 - ns
- 32 - ns
- 46 - ns
- 2.5 - nH
- 7.5 - nH
© NXP B.V. 2012. All rights reserved
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