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부품번호 | BUK7609-55A 기능 |
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기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BUK7609-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 2 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 175 °C; see Figure 10;
see Figure 11
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 10;
see Figure 11
Min Typ Max Unit
- - 55 V
[1] - - 75 A
- - 211 W
- - 18 mΩ
- 7.7 9 mΩ
NXP Semiconductors
BUK7609-55A
N-channel TrenchMOS standard level FET
103
ID
(A)
102
10
1
10−1
Limit RDSon = VDS/ID
Capped at 75 A due to package
DC
1 10
03nj20
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 4
minimum footprint; mounted on
printed-circuit board
Min Typ Max Unit
- - 0.71 K/W
- 50 - K/W
1
Zth(j-mb) δ = 0.5
(K/W)
0.2
10−1 0.1
0.05
0.02
10−2
single shot
03nj21
10−3
10−6
10−5
10−4
10−3
10−2
10−1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7609-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
4 of 13
4페이지 NXP Semiconductors
BUK7609-55A
N-channel TrenchMOS standard level FET
5
VGS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60 120 180
Tj (°C)
20
RDSon
(mΩ)
15
6 6.5 7 7.5 8
03nj18
label is VGS (V)
9
10
20
10
5
0 100 200 300 400
ID (A)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
2
03ne89
10
VGS
a (V)
8
1.5
03nj13
VDD = 14 V
6
VDD = 44 V
1
4
0.5
2
0
-60 0 60 120 180
Tj (°C)
0
0 20 40 60 80
QG (nC)
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 12. Gate-source voltage as a function of gate
charge; typical values
BUK7609-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
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BUK7609-55A | N-channel TrenchMOS standard level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |