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PDF BUK7610-55AL Data sheet ( Hoja de datos )
| Número de pieza | BUK7610-55AL | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7610-55AL
N-channel TrenchMOS standard level FET
Rev. 02 — 9 January 2008
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized
for linear operation. This product has been designed and qualified to the appropriate AEC
standard for use in automotive critical applications.
1.2 Features
175 °C rated
Stable operation in linear mode
Q101 compliant
TrenchMOS technology
1.3 Applications
12 V and 24 V loads
DC linear motor control
Automotive systems
Repetitive clamped inductive switching
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 4 and 1
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 75 A; Vsup ≤ 55 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
inductive load
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12 and
13
[1] Continuous current is limited by package.
Min Typ Max Unit
[1] - - 75 A
- - 300 W
- - 1.1 J
- 8.5 10 mΩ
1 page  
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
1
Zth(j-mb)
(K/W) δ = 0.5
0.2
10-1
0.1
0.05
0.02
10-2
003aaa734
P δ = tp
T
single shot
tp t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1 tp (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 μA; VGS = 0 V;
Tj = -55 °C
ID = 250 μA; VGS = 0 V;
Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10 and 11
ID = 1 mA; VDS = VGS;
Tj = 175 °C; see Figure 10 and
11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
ID = 1 mA; VDS = VGS;
Tj = -55 °C; see Figure 10 and 11
VDS = 55 V; VGS = 0 V;
Tj = 175 °C
VDS = 55 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = +20 V;
Tj = 25 °C
VDS = 0 V; VGS = -20 V;
Tj = 25 °C
VGS = 10 V; ID = 25 A;
Tj = 175 °C; see Figure 12 and
13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12 and 13
Min
50
55
2
1
-
-
-
-
-
-
-
Typ Max
--
--
34
--
- 4.4
- 500
0.05 10
2 100
2 100
- 20
8.5 10
Unit
V
V
V
V
V
μA
μA
nA
nA
mΩ
mΩ
BUK7610-55AL_2
Product data sheet
Rev. 02 — 9 January 2008
© NXP B.V. 2008. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
BUK7610-55AL_2
Modifications:
20080109
Product data sheet
-
BUK75_7610_55AL_1
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Typical thermal resistance (j-mb) figure added in Table 5.
BUK75_7610_55AL_1 20041022
Product data sheet
-
-
BUK7610-55AL_2
Product data sheet
Rev. 02 — 9 January 2008
© NXP B.V. 2008. All rights reserved.
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