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부품번호 | BUK9614-55A 기능 |
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기능 | N-channel TrenchMOS logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
BUK9614-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 7 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 25 A; Tj = 25 °C;
resistance
see Figure 12; see Figure 13
Avalanche ruggedness
VGS = 4.5 V; ID = 25 A;
Tj = 25 °C
VGS = 10 V; ID = 25 A;
Tj = 25 °C
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 73 A; Vsup ≤ 55 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 55 V
- - 73 A
- - 149 W
- 12 14 mΩ
- - 15 mΩ
- 11 13 mΩ
- - 230 mJ
NXP Semiconductors
BUK9614-55A
N-channel TrenchMOS logic level FET
103
ID
(A)
102
RDSon = VDS / ID
10 P
δ = tp
T
D.C.
tp
T
1
1
t
10
03nd66
VDS (V)
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9614-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 February 2011
© NXP B.V. 2011. All rights reserved.
4 of 14
4페이지 NXP Semiconductors
BUK9614-55A
N-channel TrenchMOS logic level FET
300
ID
(A)
200
03nd63
VGS (V) = 10
9
8
7
6
5
4
100
3
0 2.2
0 2 4 6 8 10
VDS (V)
16
RDSon
(mΩ)
14
03nd62
12
10
8
2 4 6 8 10
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10-1
ID
(A)
10-2
10-3
10-4
10-5
03aa36
min typ max
60
gfs
(S)
40
20
03nd60
10-6
0123
VGS (V)
0
0 20 40 60 80
ID (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK9614-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 February 2011
© NXP B.V. 2011. All rights reserved.
7 of 14
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BUK9614-55 | TrenchMOS transistor Logic level FET | NXP Semiconductors |
BUK9614-55 | TrenchMOS transistor Logic level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |