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부품번호 | BUK7614-55A 기능 |
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기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 12 페이지수
BUK7614-55A
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C
RDSon
drain-source on-state
resistance
Specify Name
VGS = 10 V; ID = 25 A;
Tj = 25 °C
EDS(AL)S
non-repetitive
ID = 50 A; Vsup ≤ 25 V;
drain-source avalanche RGS = 50 Ω; VGS = 5 V;
energy
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 55 V
- - 73 A
- - 166 W
- 12 14 mΩ
- - 125 mJ
NXP Semiconductors
BUK7614-55A
N-channel TrenchMOS standard level FET
103
IDM RDS(on) = VDS / ID
(A)
102
10 D.C.
1
1 10
003aaf239
tp = 1 μs
10 μs
100 μs
1 ms
10 ms
100 ms
102 103
VDS (V)
120
WDSS
(%)
80
003aaf251
40
0
20 60 100 140 180
T(mb) (°C)
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
Fig 4. Normalised drain-source non-repetitive
avalanche energy as a function of
mounting-base temperature
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
minimum footprint; FR4 board
Min Typ Max Unit
- - 0.9 K/W
- 50 - K/W
1
Zth(j-mb)
(K/W)
10−1
δ = 0.5
0.2
0.1
0.05
0.02
10−2
003aaf240
P
tp
δ=
T
10−3
10−7
0
10−6
10−5
10−4
10−3
tp
T
10−2 10−1
t
1 10
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7614-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
4 of 12
4페이지 NXP Semiconductors
BUK7614-55A
N-channel TrenchMOS standard level FET
5
VGS(th)
(V)
4
maximum
003aaf247
10−1
ID
(A)
10−2
003aaf248
3 typical
2 minimum
10−3
10−4
2 % typical 98 %
1 10−5
0
−100
0
100 200
Tj (°C)
ID = 1 mA; VDS = VGS
Fig 12. Gate-source threshold voltage as a function of
junction temperature
10−6
012345
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 13. Sub-threshold drain current as a function of
gate-source voltage
4
C
(nF)
3
Ciss
Coss
2 Crss
1
003aaf249
10
VGS
(V)
8
6
4
2
VDS = 14 V
003aaf250
VDS = 44 V
0
10−2
10−1
1
10 102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
0
0 10 20 30 40 50
QG (nC)
Tj = 25 °C; ID = 50 A
Fig 15. Gate-source voltage as a function of gate
charge; typical values
BUK7614-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
7 of 12
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BUK7614-55 | TrenchMOS transistor Standard level FET | NXP Semiconductors |
BUK7614-55 | TrenchMOS transistor Standard level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |