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BUK9618-55A 데이터시트 PDF




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부품번호 BUK9618-55A 기능
기능 N-channel TrenchMOS logic level FET
제조업체 NXP Semiconductors
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BUK9618-55A 데이터시트, 핀배열, 회로
BUK9618-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 16 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C
VGS = 4.5 V; ID = 25 A;
Tj = 25 °C
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
Min Typ Max Unit
- - 55 V
- - 61 A
- - 136 W
- 12 16 m
- - 19 m
- 14 18 m




BUK9618-55A pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK9618-55A
N-channel TrenchMOS logic level FET
103
ID
(A)
102
10
1
1
RDSon = VDS /ID
DC
10
03ne48
VDS (V)
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 4
minimum footprint; mounted on a
printed-circuit board
Min Typ Max Unit
- - 1.1 K/W
- 50 - K/W
10
Zth(j-mb)
(K/W)
1
101
102
δ = 0.5
0.2
0.1
0.05
0.02
Single Shot
03ne49
P δ = tp
T
103
106
105
104
103
102
tp
T
t
101
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9618-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 February 2011
© NXP B.V. 2011. All rights reserved.
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BUK9618-55A 전자부품, 판매, 대치품
NXP Semiconductors
BUK9618-55A
N-channel TrenchMOS logic level FET
50
ID
(A)
40
03ne43
30
20
10
Tj = 175 °C
0
01
Tj = 25 °C
234
VGS (V)
2.5
VGS(th)
(V)
2
1.5
1
max
typ
min
03aa33
0.5
0
-60 0 60 120 180
Tj (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
40
RDSon
(mΩ)
VGS (V) = 3
30
3.4 3.8 4
03ne46
5
2
a
1.5
03ne89
20 1
10
0
0 50 100 150 200
ID (A)
0.5
0
-60 0 60 120 180
Tj (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK9618-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 February 2011
© NXP B.V. 2011. All rights reserved.
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관련 데이터시트

부품번호상세설명 및 기능제조사
BUK9618-55

TrenchMOS transistor Logic level FET

NXP Semiconductors
NXP Semiconductors
BUK9618-55

TrenchMOS transistor Logic level FET

NXP Semiconductors
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