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부품번호 | BUK7528-55A 기능 |
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기능 | TrenchMOS stransistor Standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BUK7528-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C
VGS = 10 V; ID = 25 A;
Tj = 25 °C
ID = 34 A; Vsup ≤ 25 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 55 V
- - 42 A
- - 99 W
- 23.8 28 mΩ
- - 58 mJ
NXP Semiconductors
BUK7528-55A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Conditions
in free air
Min Typ Max Unit
- - 1.5 K/W
- 60 - K/W
10
Zth(j-mb)
(K/W)
1 δ = 0.5
10−1
0.2
0.1
0.05
0.02
0
10−2
10−6
10−4
10−2
003aaf458
P
tp
δ=
T
tp
T
t
1 102 104
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7528-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
4 of 13
4페이지 NXP Semiconductors
BUK7528-55A
N-channel TrenchMOS standard level FET
16
gfs
(S)
12
003aaf463
2.5
a
2
003aaf464
8 1.5
41
0
0 20 40
VDS > ID x RDSon
60 80
ID (A)
0.5
−100
0
100 200
Tmb (°C)
Fig 10. Forward transconductance as a function of
drain current; typical values
ID = 25 A; VGS = 5 V
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
5
VGS(th)
(V)
4
3
2
maximum
typical
minimum
003aaf465
10−1
ID
(A)
10−2
10−3
10−4
003aaf466
2 % typical 98 %
1 10−5
0
−100
0
100 200
Tj (°C)
ID = 1 mA; VDS = VGS
Fig 12. Gate-source threshold voltage as a function of
junction temperature
10−6
012345
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 13. Sub-threshold drain current as a function of
gate-source voltage
BUK7528-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
7 of 13
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BUK7528-55 | TrenchMOS transistor Standard level FET | NXP Semiconductors |
BUK7528-55 | TrenchMOS transistor Standard level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |