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BUK7675-55A PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7675-55A
기능 N-channel TrenchMOS standard level FET
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BUK7675-55A 데이터시트, 핀배열, 회로
BUK7675-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 3 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Low conduction losses due to low
on-state resistance
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V loads
„ Automotive and general purpose
power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage
ID drain current
Tj 25 °C; Tj 175 °C
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot total power dissipation
Static characteristics
Tmb = 25 °C; see Figure 2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 10 A;
Tj = 175 °C; see Figure 11;
see Figure 12
VGS = 10 V; ID = 10 A;
Tj = 25 °C; see Figure 11;
see Figure 12
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source ID = 11 A; Vsup 55 V;
avalanche energy
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 55 V
- - 20.3 A
- - 62 W
- - 150 m
- 64 75 m
- - 30.3 mJ




BUK7675-55A pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7675-55A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
mounted on printed-circuit
board ; minimum footprint
Min Typ Max Unit
- - 2.4 K/W
- 50 - K/W
03nc13
10
Zth(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
101 0.02
P
tp
δ=
T
single shot
102
106
105
104
103
102
tp
T
t
101
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7675-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 3 February 2011
© NXP B.V. 2011. All rights reserved.
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BUK7675-55A 전자부품, 판매, 대치품
NXP Semiconductors
BUK7675-55A
N-channel TrenchMOS standard level FET
10
VGS
(V)
8
VDD = 14 V
6
4
2
0
05
03nc05
VDD = 44 V
10 15
QG (nC)
5
VGS(th)
(V)
4
3
2
1
0
60
0
max
typ
min
03aa32
60 120 180
Tj (°C)
Fig 9. Gate-source voltage as a function of gate
charge; typical values
180
RDSon
(mΩ)
160
5.5 6 6.5 7
140
120
100
80
60
40
0 10 20
03nc10
8 VGS (V) = 10
30 40 50
ID (A)
Fig 10. Gate-source threshold voltage as a function of
junction temperature
2.4
a
03aa28
1.8
1.2
0.6
0
60 0
60 120 180
Tj (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK7675-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 3 February 2011
© NXP B.V. 2011. All rights reserved.
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부품번호상세설명 및 기능제조사
BUK7675-55

TrenchMOS transistor Standard level FET

NXP
NXP
BUK7675-55

TrenchMOS transistor Standard level FET

NXP
NXP

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