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PDF BUK7277-55A Data sheet ( Hoja de datos )
| Número de pieza | BUK7277-55A | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7277-55A
N-channel TrenchMOS standard level FET
12 June 2014
Product data sheet
1. General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
• AEC Q101 compliant
• Low conduction losses due to low on-state resistance
• Suitable for standard level gate drive sources
• Suitable for thermally demanding environments due to 175 °C rating
3. Applications
• 12 V and 24 V loads
• Automotive and general purpose power switching
• Motors, lamps and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2; Fig. 3
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 175 °C;
resistance
Fig. 12; Fig. 13
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 12; Fig. 13
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
ID = 6 A; Vsup ≤ 55 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 55 V
- - 18 A
- - 51 W
- - 154 mΩ
- 65 77 mΩ
- - 36 mJ
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NXP Semiconductors
BUK7277-55A
N-channel TrenchMOS standard level FET
Symbol
Parameter
Conditions
IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 175 °C;
resistance
Fig. 12; Fig. 13
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 12; Fig. 13
Dynamic characteristics
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 14
Crss reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf fall time
LD
internal drain
measured from drain lead from
inductance
package to centre of die; Tj = 25 °C
LS
internal source
measured from source lead from
inductance
package to source bond pad; Tj = 25 °C
Source-drain diode
VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 15
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs;
Qr
recovered charge
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
- 2 100 nA
- 2 100 nA
- - 154 mΩ
- 65 77 mΩ
- 316 422 pF
- 92 110 pF
- 64 87 pF
- 10 - ns
- 50 - ns
- 70 - ns
- 40 - ns
- 2.5 - nH
- 7.5 - nH
- 0.85 1.2 V
- 32 - ns
- 120 - nC
BUK7277-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 12
5 Page 
NXP Semiconductors
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-
CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight,
MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug,
TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
BUK7277-55A
N-channel TrenchMOS standard level FET
BUK7277-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 12
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