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PDF BUK754R0-55B Data sheet ( Hoja de datos )
| Número de pieza | BUK754R0-55B | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK754R0-55B
N-channel TrenchMOS standard level FET
Rev. 5 — 22 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 7;
see Figure 12
Min Typ Max Unit
- - 55 V
[1] - - 75 A
- - 300 W
- 3.4 4 mΩ
1 page  
NXP Semiconductors
BUK754R0-55B
N-channel TrenchMOS standard level FET
103
ID
(A)
102
10
Limit RDSon = VDS / ID
(1)
DC
03ng55
tp = 10 μ s
100 μs
1 ms
10 ms
100 ms
1
10-1 1 10 102
VDS (V)
(1) Capped at 75 A due to package.
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 5
vertical in still air
Min Typ Max Unit
- - 0.5 K/W
- 60 - K/W
1
Zth(j-mb) δ = 0.5
(K/W)
10-1 0.2
0.1
0.05
10-2 0.02
03ng56
P δ = tp
T
single shot
tp t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK754R0-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 22 April 2011
© NXP B.V. 2011. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK754R0-55B
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK754R0-55B v.5
Modifications:
20110422
Product data sheet
-
BUK75_764R0-55B_4
• The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK754R0-55B separated from data sheet BUK75_764R0-55B_4.
BUK75_764R0-55B_4 20071004
Product data sheet
-
BUK75_764R0-55B_3
BUK754R0-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 22 April 2011
© NXP B.V. 2011. All rights reserved.
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