|
|
PDF BUK654R6-55C Data sheet ( Hoja de datos )
| Número de pieza | BUK654R6-55C | |
| Descripción | N-channel TrenchMOS intermediate level FET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BUK654R6-55C (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
BUK654R6-55C
N-channel TrenchMOS intermediate level FET
Rev. 02 — 14 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
drain-source
voltage
drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Min Typ Max Unit
- - 55 V
[1] - - 100 A
Ptot total power Tmb = 25 °C; see Figure 2
dissipation
- - 204 W
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 25 A; Tj = 25 °C; - 4.6 5.4 mΩ
on-state resistance see Figure 11
1 page  
NXP Semiconductors
BUK654R6-55C
N-channel TrenchMOS intermediate level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
vertical in free air
Min Typ Max Unit
- - 0.74 K/W
- 60 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10−1
0.1
0.05
0.02
10−2
single shot
003aae531
P
tp
δ= T
10−3
10−6
10−5
10−4
10−3
10−2
tp
T
t
10−1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK654R6-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 14 October 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK654R6-55C
N-channel TrenchMOS intermediate level FET
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
BUK654R6-55C v.2 20101014
Product data sheet
Modifications:
• Status changed from objective to product.
• Various changes to content.
BUK654R6-55C v.1 20100921
Objective data sheet
Change notice
-
-
Supersedes
BUK654R6-55C v.1
-
BUK654R6-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 14 October 2010
© NXP B.V. 2010. All rights reserved.
11 of 14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BUK654R6-55C.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BUK654R6-55C | N-channel TrenchMOS intermediate level FET | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |