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PDF BUK6507-55C Data sheet ( Hoja de datos )
| Número de pieza | BUK6507-55C | |
| Descripción | N-channel TrenchMOS logic and standard level FET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BUK6507-55C
N-channel TrenchMOS logic and standard level FET
Rev. 01 — 12 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drives
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A;
resistance
Tj = 25 °C; see Figure 11
Min Typ Max Unit
- - 55 V
- - 100 A
- - 158 W
- 5.8 7 mΩ
1 page  
NXP Semiconductors
BUK6507-55C
N-channel TrenchMOS logic and standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see Figure 4
Min Typ Max Unit
- - 0.95 K/W
1
Zth(j-mb)
(K/W) δ = 0.5
0.2
10-1
0.1
0.05
0.02
10-2
single shot
003aae317
P δ = tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
t
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6507-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 12 October 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
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NXP Semiconductors
8. Revision history
Table 7. Revision history
Document ID
Release date
BUK6507-55C v.1
20101012
BUK6507-55C
N-channel TrenchMOS logic and standard level FET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
BUK6507-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 12 October 2010
© NXP B.V. 2010. All rights reserved.
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