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PDF BUK7514-55A Data sheet ( Hoja de datos )
| Número de pieza | BUK7514-55A | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7514-55A
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche Ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C
VGS = 10 V; ID = 25 A;
Tj = 25 °C
ID = 50 A; Vsup ≤ 25 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C;
unclamped
Min Typ Max Unit
- - 55 V
- - 73 A
- - 166 W
- 12 14 mΩ
- - 125 mJ
1 page  
NXP Semiconductors
BUK7514-55A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS drain leakage current
IGSS gate leakage current
RDSon
drain-source on-state
resistance
Dynamic characteristics
Ciss
Coss
Crss
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS internal source
inductance
Source-drain diode
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C
VDS = 55 V; VGS = 0 V; Tj = 25 °C
VDS = 55 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;
RG(ext) = 10 Ω; Tj = 25 °C
measured from drain lead 6 mm from
package to centre of die; Tj = 25 °C
measured from contact screw on tab to
centre of die; Tj = 25 °C
measured from source lead to source
bond pad; Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C
IS = 73 A; VGS = 0 V; Tj = 25 °C
IS = 73 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
55 - - V
50 - - V
234V
1- - V
- - 4.4 V
- 0.05 10 µA
- - 500 µA
- 2 100 nA
- 2 100 nA
- - 28 mΩ
- 12 14 mΩ
- 1848 2464 pF
- 421 506 pF
- 231 317 pF
- 17 26 ns
- 79 119 ns
- 57 80 ns
- 51 71 ns
- 4.5 - nH
- 3.5 - nH
- 7.5 - nH
- 0.85 1.2 V
- 1.1 - V
- 54 - ns
- 0.12 - µC
BUK7514-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BUK7514-55A
N-channel TrenchMOS standard level FET
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BUK7514-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
11 of 12
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