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PDF BUK7520-55A Data sheet ( Hoja de datos )
| Número de pieza | BUK7520-55A | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7520-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 15 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12; see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 48 A; Vsup ≤ 55 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C;
unclamped
Min Typ Max Unit
- - 55 V
- - 54 A
- - 118 W
- - 40 mΩ
- 17 20 mΩ
- - 115 mJ
1 page  
NXP Semiconductors
BUK7520-55A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
vertical in still air
Min Typ Max Unit
- - 1.2 K/W
- 60 - K/W
10
Zth(j-mb)
(K/W)
1
10−1
δ = 0.5
0.2
0.1
0.05
0.02
10−2 Single Shot
10−3
10−6
10−5
10−4
10−3
03nc67
P
tp
δ=
T
10−2
tp
T
t
10−1
tp (s)
1
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
BUK7520-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 15 June 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK7520-55A
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date Data sheet status
Change notice
Supersedes
BUK7520-55A v.2
Modifications:
20100615
Product data sheet
-
BUK7520_7620_55A v.1
• The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK7520-55A separated from data sheet BUK7520_7620_55A v.1.
BUK7520_7620_55A v.1 20010118
Product specification
-
-
BUK7520-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 15 June 2010
© NXP B.V. 2010. All rights reserved.
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