Datasheet.kr   

BUK7E13-60E PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7E13-60E
기능 N-channel TrenchMOS standard level FET
제조업체 NXP Semiconductors
로고 NXP Semiconductors 로고 



전체 12 페이지

		

No Preview Available !

BUK7E13-60E 데이터시트, 핀배열, 회로
BUK7E13-60E
N-channel TrenchMOS standard level FET
11 September 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
ID = 15 A; VDS = 48 V; VGS = 10 V;
Fig. 13; Fig. 14
Min Typ Max Unit
- - 60 V
- - 58 A
- - 96 W
-
9.6 13
- 6.9 - nC
Scan or click this QR code to view the latest information for this product




BUK7E13-60E pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7E13-60E
N-channel TrenchMOS standard level FET
103
ID
(A)
102
10
1
10-1
Limit RDSon= VDS/ ID
DC
003aah782
tp =10 µ s
100 µ s
1 ms
10 ms
100 ms
10-2
1
10
VDS (V)
102
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
vertical in still air
Min Typ Max Unit
- - 1.56 K/W
- 65 - K/W
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
10-1 0.05
0.02
single shot
10-2
003aah168
P
δ=
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
t
10-1
tp (s)
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7E13-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2012
© NXP B.V. 2012. All rights reserved
4 / 12

4페이지










BUK7E13-60E 전자부품, 판매, 대치품
NXP Semiconductors
BUK7E13-60E
N-channel TrenchMOS standard level FET
10-1
ID
(A)
10-2
10-3
10-4
10-5
003aah028
min typ max
30 003aah460
5 5.5 6
RDSon
(mΩ)
20
8
10 VGS(V) = 10
10-6
0246
VGS(V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
0 40 80 ID(A) 120
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
2.4
a
1.8
003aag814
1.2
0.6
0
-60 0 60 120 180
Tj (°C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig. 13. Gate charge waveform definitions
BUK7E13-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2012
© NXP B.V. 2012. All rights reserved
7 / 12

7페이지



구       성총 12 페이지
다운로드[ BUK7E13-60E.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
BUK7E13-60E

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵