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BUK78150-55A PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK78150-55A
기능 N-channel TrenchMOS standard level FET
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BUK78150-55A 데이터시트, 핀배열, 회로
BUK78150-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 16 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 150 °C
voltage
ID
drain current
VGS = 10 V; Tsp = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tsp = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 5 A;
Tj = 150 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 5 A;
Tj = 25 °C;
see Figure 12; see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 5 A; Vsup 55 V;
drain-source
RGS = 50 ; VGS = 10 V;
avalanche energy Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 55 V
- - 5.5 A
- - 8W
- - 278 m
- 128 150 m
- - 25 mJ




BUK78150-55A pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK78150-55A
N-channel TrenchMOS standard level FET
102
ID
(A)
10
RDSon = VDS / ID
1
P
101
δ = tp
T
102
1
tp
T
t
D.C.
10
03nc19
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-sp)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to solder
point
thermal resistance
from junction to
ambient
Conditions
see Figure 4
Min Typ Max Unit
- - 15 K/W
- 70 - K/W
102
Zth(j-sp)
(K/W)
03nc18
10
δ = 0.5
0.2
0.1
1 0.05
0.02
101
Single Shot
102
106
105
104
103
102
P
tp
δ=
T
101
tp
T
t
1 10
tp (s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
BUK78150-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 June 2010
© NXP B.V. 2010. All rights reserved.
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BUK78150-55A 전자부품, 판매, 대치품
NXP Semiconductors
BUK78150-55A
N-channel TrenchMOS standard level FET
10
ID
(A)
8
03nc22
6
4
2
Tj = 150 °C
Tj = 25 °C
0
0 2 4 6 8 10
VGS (V)
10
VGS
(V)
8
6
4
2
0
0
VDD = 14 V
03nb87
VDD = 44 V
246
QG (nC)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source voltage as a function of turn-on
function of gate-source voltage; typical values
gate charge; typical values
5
VGS(th)
(V)
4
max
03aa32
350
RDSon
(mΩ)
300
5.5
6.5
6
7
03nb92
8 VGS (V) = 10
3 typ
2 min
250
200
1 150
0
60 0
60 120 180
Tj (°C)
100
0
5 10 15 20
ID (A)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
BUK78150-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 June 2010
© NXP B.V. 2010. All rights reserved.
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부품번호상세설명 및 기능제조사
BUK78150-55

TrenchMOS transistor Standard level FET

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BUK78150-55

TrenchMOS transistor Standard level FET

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