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부품번호 | BUK9Y19-75B 기능 |
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기능 | N-channel TrenchMOS logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
BUK9Y19-75B
N-channel TrenchMOS logic level FET
Rev. 04 — 13 April 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
Engine management
General purpose power switching
Motors, lamps and solenoids
Transmission control
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
drain-source
voltage
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 5 V; ID = 20 A;
Tj = 25 °C; see Figure 13
VGS = 10 V; ID = 20 A;
Tj = 25 °C
Min Typ Max Unit
- - 75 V
- - 48.2 A
- - 106 W
- 15.9 19 mΩ
- 14.7 18 mΩ
NXP Semiconductors
BUK9Y19-75B
N-channel TrenchMOS logic level FET
50
ID
(A)
40
30
20
10
0
0
003aac509
50 100 150 200
Tmb (°C)
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
102
IAL
(A)
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac488
(1)
(2)
1
(3)
10-1
10-3
10-2
10-1
1 10
tAL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK9Y19-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 13 April 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
4페이지 NXP Semiconductors
BUK9Y19-75B
N-channel TrenchMOS logic level FET
120
ID
(A)
100
80
60
40
20
0
0
VGS (V) = 10
246
003aad092
5
4
3
2.8
2.6
8 10
VDS (V)
80
RDSon
(mΩ)
60
2.6 2.8 3
003aad096
3.2 4 5
40
VGS (V) = 10
20
0
0 40 80 120
ID (A)
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
80
gfs
(S)
70
003aad097
50
ID
(A)
40
003aad093
60 30
50
40
30
0
10 20 30 ID (A) 40
20
10
0
0
Tj = 175 °C
Tj = 25 °C
1234
VGS (V)
Fig 8. Forward transconductance as a function of
drain current; typical values
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK9Y19-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 13 April 2010
© NXP B.V. 2010. All rights reserved.
7 of 14
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |