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BUK7Y12-100E PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7Y12-100E
기능 MOSFET
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BUK7Y12-100E 데이터시트, 핀배열, 회로
BUK7Y12-100E
N-channel 100 V, 12 mΩ standard level MOSFET in LFPAK56
8 May 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 80 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 100 V
- - 85 A
- - 238 W
-
8.1 12
- 21 - nC
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BUK7Y12-100E pdf, 반도체, 판매, 대치품
NXP Semiconductors
103
IAL
(A)
102
BUK7Y12-100E
N-channel 100 V, 12 mΩ standard level MOSFET in LFPAK56
003aai341
10
(1)
1 (2)
10-1
10-3
10-2
10-1
(3)
1 10
tAL (ms)
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
10
Limit RDSon = VDS / ID
tp =10 µ s
100 µ s
003aai342
DC 1 ms
1 10 ms
100 ms
10-1
1
10
102
VDS (V)
103
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min Typ Max Unit
- - 0.63 K/W
BUK7Y12-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 May 2013
© NXP B.V. 2013. All rights reserved
4 / 13

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BUK7Y12-100E 전자부품, 판매, 대치품
NXP Semiconductors
BUK7Y12-100E
N-channel 100 V, 12 mΩ standard level MOSFET in LFPAK56
200
ID
(A)
150
003aai347
5
VGS(th)
(V)
4
003aah027
max
3 typ
100
2 min
50
Tj = 175 °C
Tj = 25 °C
0
0 2 4 VGS(V) 6
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
1
0
-60 0 60 120 180
Tj (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
10-1
ID
(A)
10-2
10-3
10-4
10-5
003aah028
min typ max
30
RDSon
(mΩ)
24
18
12
6
003aai350
5
5.5
6
VGS(V) = 10
10-6
0246
VGS(V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
0 30 60 ID(A) 90
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK7Y12-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 May 2013
© NXP B.V. 2013. All rights reserved
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BUK7Y12-100E

MOSFET

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