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부품번호 | BUK764R0-75C 기능 |
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기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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BUK764R0-75C
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
AEC-Q101 compliant
Avalanche robust
Suitable for standard level gate drive
Suitable for thermally demanding
environment due to 175 °C rating
1.3 Applications
12 V Motor, lamp and solenoid loads
High performance automotive power
systems
High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Ptot
Quick reference data
Parameter
Conditions
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
total power
dissipation
Tmb = 25 °C; see Figure 2
Min Typ Max Unit
- - 75 V
[1][2] - - 100 A
- - 333 W
NXP Semiconductors
200
003aab492
ID
(A)
150
100
(1)
50
0
0 50 100 150 200
Tmb (°C)
BUK764R0-75C
N-channel TrenchMOS standard level FET
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
103
IAL
(A)
102
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aab385
(1)
(2)
10
1
10-3
10-2
10-1
(3)
1 10
tAL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time.
BUK764R0-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
4 of 13
4페이지 NXP Semiconductors
BUK764R0-75C
N-channel TrenchMOS standard level FET
5
VGS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60 120 180
Tj (°C)
10−1
ID
(A)
10−2
10−3
10−4
10−5
10−6
0
03aa35
min typ max
246
VGS (V)
Fig 5. Gate-source threshold voltage as a function of Fig 6. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
12
RDSon
(mΩ)
10
003aab386
2.4
a
1.8
03aa28
8
1.2
6
0.6
4
2
5 10 15 VGS (V) 20
0
−60 0
60 120 180
Tj (°C)
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain-source on-state resistance
of gate-source voltage; typical values
factor as a function of junction temperature
BUK764R0-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |