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BUK764R0-75C PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK764R0-75C
기능 N-channel TrenchMOS standard level FET
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BUK764R0-75C 데이터시트, 핀배열, 회로
BUK764R0-75C
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
„ AEC-Q101 compliant
„ Avalanche robust
„ Suitable for standard level gate drive
„ Suitable for thermally demanding
environment due to 175 °C rating
1.3 Applications
„ 12 V Motor, lamp and solenoid loads
„ High performance automotive power
systems
„ High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Ptot
Quick reference data
Parameter
Conditions
drain-source voltage
drain current
Tj 25 °C; Tj 175 °C
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
total power
dissipation
Tmb = 25 °C; see Figure 2
Min Typ Max Unit
- - 75 V
[1][2] - - 100 A
- - 333 W




BUK764R0-75C pdf, 반도체, 판매, 대치품
NXP Semiconductors
200
003aab492
ID
(A)
150
100
(1)
50
0
0 50 100 150 200
Tmb (°C)
BUK764R0-75C
N-channel TrenchMOS standard level FET
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
103
IAL
(A)
102
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aab385
(1)
(2)
10
1
10-3
10-2
10-1
(3)
1 10
tAL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time.
BUK764R0-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
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BUK764R0-75C 전자부품, 판매, 대치품
NXP Semiconductors
BUK764R0-75C
N-channel TrenchMOS standard level FET
5
VGS(th)
(V)
4
3
2
1
0
60
0
max
typ
min
03aa32
60 120 180
Tj (°C)
101
ID
(A)
102
103
104
105
106
0
03aa35
min typ max
246
VGS (V)
Fig 5. Gate-source threshold voltage as a function of Fig 6. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
12
RDSon
(mΩ)
10
003aab386
2.4
a
1.8
03aa28
8
1.2
6
0.6
4
2
5 10 15 VGS (V) 20
0
60 0
60 120 180
Tj (°C)
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain-source on-state resistance
of gate-source voltage; typical values
factor as a function of junction temperature
BUK764R0-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
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BUK764R0-75C

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

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