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부품번호 | BUK7613-75B 기능 |
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기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BUK7613-75B
N-channel TrenchMOS standard level FET
Rev. 3 — 27 December 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; see Figure 1;
see Figure 3
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; VDS = 60 V;
Tj = 25 °C; see Figure 13
ID = 75 A; Vsup ≤ 75 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 75 V
- - 75 A
- - 157 W
-
11.7 13
mΩ
- 15 - nC
- - 125 mJ
NXP Semiconductors
BUK7613-75B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
mounted on a printed-circuit
board ; minimum footprint
Min Typ Max Unit
- - 0.95 K/W
- 50 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10−1
0.1
0.05
0.02
10−2
single shot
03nm82
P
tp
δ=
T
10−3
10−6
10−5
10−4
10−3
10−2
tp
T
t
10−1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7613-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 27 December 2011
© NXP B.V. 2011. All rights reserved.
4 of 13
4페이지 NXP Semiconductors
BUK7613-75B
N-channel TrenchMOS standard level FET
100
ID
(A)
75
03nm76
50
25
Tj = 175 °C Tj = 25 °C
0
02468
VGS (V)
5
VGS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60 120 180
Tj (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
40
RDSon
(mΩ)
30
20
10
5.5 6
03nm79
Label is VGS (V)
6.5 7
7.5
8
10
2.4
a
1.6
0.8
03nb25
0
0 60 120 180
ID (A)
0
−60 0
60 120 180
Tj (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK7613-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 27 December 2011
© NXP B.V. 2011. All rights reserved.
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BUK7613-75B | N-channel TrenchMOS standard level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |