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BUK7613-75B 데이터시트 PDF




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부품번호 BUK7613-75B 기능
기능 N-channel TrenchMOS standard level FET
제조업체 NXP Semiconductors
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BUK7613-75B 데이터시트, 핀배열, 회로
BUK7613-75B
N-channel TrenchMOS standard level FET
Rev. 3 — 27 December 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
VGS = 10 V; Tmb = 25 °C; see Figure 1;
see Figure 3
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; VDS = 60 V;
Tj = 25 °C; see Figure 13
ID = 75 A; Vsup 75 V; RGS = 50 ;
VGS = 10 V; Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 75 V
- - 75 A
- - 157 W
-
11.7 13
m
- 15 - nC
- - 125 mJ




BUK7613-75B pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7613-75B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
mounted on a printed-circuit
board ; minimum footprint
Min Typ Max Unit
- - 0.95 K/W
- 50 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
101
0.1
0.05
0.02
102
single shot
03nm82
P
tp
δ=
T
103
106
105
104
103
102
tp
T
t
101
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7613-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 27 December 2011
© NXP B.V. 2011. All rights reserved.
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BUK7613-75B 전자부품, 판매, 대치품
NXP Semiconductors
BUK7613-75B
N-channel TrenchMOS standard level FET
100
ID
(A)
75
03nm76
50
25
Tj = 175 °C Tj = 25 °C
0
02468
VGS (V)
5
VGS(th)
(V)
4
3
2
1
0
60
0
max
typ
min
03aa32
60 120 180
Tj (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
40
RDSon
(mΩ)
30
20
10
5.5 6
03nm79
Label is VGS (V)
6.5 7
7.5
8
10
2.4
a
1.6
0.8
03nb25
0
0 60 120 180
ID (A)
0
60 0
60 120 180
Tj (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK7613-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 27 December 2011
© NXP B.V. 2011. All rights reserved.
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BUK7613-75B

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

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