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부품번호 | BUK964R7-80E 기능 |
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기능 | N-channel TrenchMOS logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BUK964R7-80E
N-channel TrenchMOS logic level FET
13 March 2014
Product data sheet
1. General description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
2. Features and benefits
• AEC Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
3. Applications
• 12V, 24V and 48V Automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
[1]
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 25 A; VDS = 64 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 80 V
- - 120 A
- - 324 W
- 3.6 4.7 mΩ
- 28.9 - nC
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NXP Semiconductors
BUK964R7-80E
N-channel TrenchMOS logic level FET
103
ID
(A)
102
Limit RDSon = VDS / ID
tp =10 µ s
100 µ s
003aah917
10
DC 1 ms
1
10 ms
100 ms
10-1
10-1
1
10 102 103
VDS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
103
IAL
(A)
102
003aah916
(1)
10
(2)
1
(3)
10-1
10-3
10-2
10-1
1 tAL(ms) 10
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
minimum footprint ; mounted on a
printed-circuit board
BUK964R7-80E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 March 2014
Min Typ Max Unit
- - 0.46 K/W
- 50 - K/W
© NXP Semiconductors N.V. 2014. All rights reserved
4 / 13
4페이지 NXP Semiconductors
BUK964R7-80E
N-channel TrenchMOS logic level FET
360
ID
(A)
240
003aah922
3
VGS(th)
(V)
2.5
2
1.5
max
typ
003aah025
120
0
0
Tj = 175 °C
Tj = 25 °C
12345
VGS (V)
1
0.5
0
-60
min
0 60 120 180
Tj (°C)
Fig. 8. Transfer characteristics; drain current as a
Fig. 9. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
10-1
ID
(A)
10-2
10-3
003aah026
min typ max
10-4
10-5
10-6
0123
VGS (V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
20
RDSon
(mΩ)
15
2.4
2.6
003aah925
2.8 3
10
5 4.5
VGS(V) = 10
0
0 80 160 ID(A) 240
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK964R7-80E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
7 / 13
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