|
|
|
부품번호 | BUK769R6-80E 기능 |
|
|
기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BUK769R6-80E
N-channel TrenchMOS standard level FET
5 October 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
• AEC Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
• 12V, 24V and 48V Automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 20 A; VDS = 64 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 80 V
[1] - - 75 A
- - 182 W
- 7.2 9.6 mΩ
- 17.9 - nC
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
102
IAL
(A)
10
BUK769R6-80E
N-channel TrenchMOS standard level FET
003aah766
(1)
(2)
1
(3)
10-1
10-3
10-2
10-1
1 tAL(ms) 10
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
Limit RDSon= VDS/ ID
10
1
DC
tp =10 µ s
100 µ s
1 ms
10 ms
100 ms
003aah767
10-1
1
10
102
VDS(V)
103
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
minimum footprint ; mounted on a
printed-circuit board
BUK769R6-80E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 October 2012
Min Typ Max Unit
- - 0.82 K/W
- 50 - K/W
© NXP B.V. 2012. All rights reserved
4 / 13
4페이지 NXP Semiconductors
BUK769R6-80E
N-channel TrenchMOS standard level FET
200
ID
(A)
150
100
50
003aah772
Tj = 175 °C
Tj = 25 °C
5
VGS(th)
(V)
4
3
2
1
003aah027
max
typ
min
0
0 2.5 5 7.5 10
VGS (V)
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
0
-60 0 60 120 180
Tj (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
10-1
ID
(A)
10-2
10-3
10-4
10-5
003aah028
min typ max
25
RDSon
(mΩ)
20
15
10
5
003aah775
5 5.5 6
8
VGS(V) = 10
10-6
0246
VGS(V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
0 60 120 ID(A) 180
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK769R6-80E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 October 2012
© NXP B.V. 2012. All rights reserved
7 / 13
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ BUK769R6-80E.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BUK769R6-80E | N-channel TrenchMOS standard level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |