Datasheet.kr   

BUK769R6-80E PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK769R6-80E
기능 N-channel TrenchMOS standard level FET
제조업체 NXP Semiconductors
로고 NXP Semiconductors 로고 



전체 13 페이지

		

No Preview Available !

BUK769R6-80E 데이터시트, 핀배열, 회로
BUK769R6-80E
N-channel TrenchMOS standard level FET
5 October 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
12V, 24V and 48V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 20 A; VDS = 64 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 80 V
[1] - - 75 A
- - 182 W
- 7.2 9.6 mΩ
- 17.9 - nC
Scan or click this QR code to view the latest information for this product




BUK769R6-80E pdf, 반도체, 판매, 대치품
NXP Semiconductors
102
IAL
(A)
10
BUK769R6-80E
N-channel TrenchMOS standard level FET
003aah766
(1)
(2)
1
(3)
10-1
10-3
10-2
10-1
1 tAL(ms) 10
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
Limit RDSon= VDS/ ID
10
1
DC
tp =10 µ s
100 µ s
1 ms
10 ms
100 ms
003aah767
10-1
1
10
102
VDS(V)
103
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
minimum footprint ; mounted on a
printed-circuit board
BUK769R6-80E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 October 2012
Min Typ Max Unit
- - 0.82 K/W
- 50 - K/W
© NXP B.V. 2012. All rights reserved
4 / 13

4페이지










BUK769R6-80E 전자부품, 판매, 대치품
NXP Semiconductors
BUK769R6-80E
N-channel TrenchMOS standard level FET
200
ID
(A)
150
100
50
003aah772
Tj = 175 °C
Tj = 25 °C
5
VGS(th)
(V)
4
3
2
1
003aah027
max
typ
min
0
0 2.5 5 7.5 10
VGS (V)
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
0
-60 0 60 120 180
Tj (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
10-1
ID
(A)
10-2
10-3
10-4
10-5
003aah028
min typ max
25
RDSon
(mΩ)
20
15
10
5
003aah775
5 5.5 6
8
VGS(V) = 10
10-6
0246
VGS(V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
0 60 120 ID(A) 180
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK769R6-80E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 October 2012
© NXP B.V. 2012. All rights reserved
7 / 13

7페이지



구       성총 13 페이지
다운로드[ BUK769R6-80E.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
BUK769R6-80E

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵