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PDF BUK6211-75C Data sheet ( Hoja de datos )
| Número de pieza | BUK6211-75C | |
| Descripción | N-channel TrenchMOS FET | |
| Fabricantes | NXP Semiconductors | |
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BUK6211-75C
N-channel TrenchMOS FET
Rev. 02 — 28 September 2010
Product data sheet
1. Product profile
1.1 General description
Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor
(FET) in a plastic package using advanced TrenchMOS technology. This product has
been designed and qualified to the appropriate AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Engine management
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A;
resistance
Tj = 25 °C; see Figure 11
Min Typ Max Unit
- - 75 V
- - 74 A
- - 158 W
- 9.3 11 mΩ
1 page  
NXP Semiconductors
BUK6211-75C
N-channel TrenchMOS FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see Figure 4
Min Typ Max Unit
- - 0.95 K/W
1
Zth (K/W) δ = 0.5
0.2
10-1
0.1
0.05
0.02
10-2
single shot
003aae407
P δ = tp
T
tp t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1 tp (s )
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6211-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 September 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
7. Package outline
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
BUK6211-75C
N-channel TrenchMOS FET
SOT428
EA
b2
y
A
A1
D1
HD
mounting
base
L2
b1
2
1
L
3
b
e
e1
wM A
L1
c
E1
D2
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
b
b1 b2
c
D1
D2
min
E
E1
min
e
e1 HD
L L1
min
mm
2.38
2.22
0.93
0.46
0.89
0.71
1.1
0.9
5.46 0.56 6.22
5.00 0.20 5.98
4.0
6.73
6.47
4.45 2.285 4.57
10.4
9.6
2.95
2.55
0.5
L2
0.9
0.5
w
y
max
0.2 0.2
OUTLINE
VERSION
SOT428
IEC
REFERENCES
JEDEC
JEITA
TO-252
SC-63
Fig 17. Package outline SOT428 (DPAK)
EUROPEAN
PROJECTION
ISSUE DATE
06-02-14
06-03-16
BUK6211-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 September 2010
© NXP B.V. 2010. All rights reserved.
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