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PDF BUK7226-75A Data sheet ( Hoja de datos )
| Número de pieza | BUK7226-75A | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7226-75A
N-channel TrenchMOS standard level FET
Rev. 02 — 22 February 2008
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features
175 °C rated
Q101 compliant
Low on-state resistance
Standard level compatible
1.3 Applications
12 V, 24 V and 42 V loads
General purpose power switching
Automotive systems
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1 and 4
Ptot total power dissipation
Tj junction temperature
Static characteristics
Tmb = 25 °C; see Figure 2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12 and
13
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
ID = 45 A; Vsup ≤ 75 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
inductive load
[1] Capped at 45 A due to bondwire.
Min Typ Max Unit
- - 75 V
[1] - - 45 A
--
-55 -
158 W
175 °C
- 22 26 mΩ
- - 215 mJ
1 page  
NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
1
δ = 0.5
Zth(j-mb)
(K/W) 0.2
0.1
10-1
0.05
0.02
003aac180
10-2
single shot
P δ = tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
10-1 tp (s)
t
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 0.25 mA; VGS = 0 V;
Tj = -55 °C
ID = 0.25 mA; VGS = 0 V;
Tj = 25 °C
ID = 1 mA; VDS = VGS;
Tj = 175 °C; see Figure 11
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
ID = 1 mA; VDS = VGS;
Tj = -55 °C; see Figure 11
VDS = 75 V; VGS = 0 V; Tj = 25 °C
VDS = 75 V; VGS = 0 V;
Tj = 175 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V;
Tj = 25 °C
VGS = 10 V; ID = 25 A;
Tj = 175 °C; see Figure 12 and
13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12 and 13
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
Min
70
75
1
2
-
-
-
-
-
-
-
-
BUK7226-75A_2
Product data sheet
Rev. 02 — 22 February 2008
Typ Max Unit
--
--
--
34
- 4.4
0.05 10
- 500
2 100
2 100
- 54
V
V
V
V
V
μA
μA
nA
nA
mΩ
22 26 mΩ
0.85
1.2 V
© NXP B.V. 2008. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
BUK7226-75A_2
Modifications:
20080222
Product data sheet
-
BUK7226_75A-01
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
BUK7226_75A-01
20001009
Product specification; initial version
-
BUK7226-75A_2
Product data sheet
Rev. 02 — 22 February 2008
© NXP B.V. 2008. All rights reserved.
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