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BUK6226-75C 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BUK6226-75C은 전자 산업 및 응용 분야에서
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부품번호 BUK6226-75C 기능
기능 N-channel TrenchMOS FET
제조업체 NXP Semiconductors
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BUK6226-75C 데이터시트, 핀배열, 회로
BUK6226-75C
N-channel TrenchMOS FET
Rev. 01 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for standard and logic level
gate drive sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V Automotive systems
„ Electric and electro-hydraulic power
steering
„ Motors, lamps and solenoid control
„ Start-Stop micro-hybrid applications
„ Transmission control
„ Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source voltage
Tj 25 °C; Tj 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
Dynamic characteristics
VGS = 10 V; ID = 12 A;
Tj = 25 °C; see Figure 11
ID = 33 A; Vsup 75 V;
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge
ID = 25 A; VDS = 60 V;
VGS = 10 V; see Figure 13;
see Figure 14
Min Typ Max Unit
- - 75 V
- - 33 A
- - 80 W
- 24.5 29 m
- - 42 mJ
- 9.4 - nC




BUK6226-75C pdf, 반도체, 판매, 대치품
NXP Semiconductors
40
ID
(A)
30
003aae859
20
10
0
0 50 100 150 200
Tmb(°C)
BUK6226-75C
N-channel TrenchMOS FET
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS/ ID
10
1
10-1
1
DC
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae860
tp =10 μ s
100 μ s
1 ms
10 ms
100 ms
102
V DS(V)
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK6226-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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BUK6226-75C 전자부품, 판매, 대치품
NXP Semiconductors
BUK6226-75C
N-channel TrenchMOS FET
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
Conditions
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
IS = 20 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 25 V
Min Typ Max Unit
- 0.8 1.2 V
- 42 - ns
- 74 - nC
80
ID
(A)
60
VGS(V) = 8.0
003aae861
5.5
5.0
4.5
40
4.0
20 3.8
3.6
3.3
0
0 1 2 3 4 VDS(V) 5
50
gfs
(S)
40
003aae863
30
20
10
0
0 10 20 30 40 50
ID (A)
Fig 5. Output characteristics: drain current as a
Fig 6. Forward transconductance as a function of
function of drain-source voltage; typical values
drain current; typical values
50
ID
(A)
40
003aae862
80
RDSon
(mΩ)
60
003aae867
30
Tj = 175 °C
Tj = 25 °C
20
40
20
10
0
0246
VGS(V)
0
0 5 10 15 20
VGS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
BUK6226-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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부품번호상세설명 및 기능제조사
BUK6226-75C

N-channel TrenchMOS FET

NXP Semiconductors
NXP Semiconductors

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