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부품번호 | BUK6226-75C 기능 |
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기능 | N-channel TrenchMOS FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
BUK6226-75C
N-channel TrenchMOS FET
Rev. 01 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
Dynamic characteristics
VGS = 10 V; ID = 12 A;
Tj = 25 °C; see Figure 11
ID = 33 A; Vsup ≤ 75 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge
ID = 25 A; VDS = 60 V;
VGS = 10 V; see Figure 13;
see Figure 14
Min Typ Max Unit
- - 75 V
- - 33 A
- - 80 W
- 24.5 29 mΩ
- - 42 mJ
- 9.4 - nC
NXP Semiconductors
40
ID
(A)
30
003aae859
20
10
0
0 50 100 150 200
Tmb(°C)
BUK6226-75C
N-channel TrenchMOS FET
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS/ ID
10
1
10-1
1
DC
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae860
tp =10 μ s
100 μ s
1 ms
10 ms
100 ms
102
V DS(V)
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK6226-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
4페이지 NXP Semiconductors
BUK6226-75C
N-channel TrenchMOS FET
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
Conditions
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
IS = 20 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 25 V
Min Typ Max Unit
- 0.8 1.2 V
- 42 - ns
- 74 - nC
80
ID
(A)
60
VGS(V) = 8.0
003aae861
5.5
5.0
4.5
40
4.0
20 3.8
3.6
3.3
0
0 1 2 3 4 VDS(V) 5
50
gfs
(S)
40
003aae863
30
20
10
0
0 10 20 30 40 50
ID (A)
Fig 5. Output characteristics: drain current as a
Fig 6. Forward transconductance as a function of
function of drain-source voltage; typical values
drain current; typical values
50
ID
(A)
40
003aae862
80
RDSon
(mΩ)
60
003aae867
30
Tj = 175 °C
Tj = 25 °C
20
40
20
10
0
0246
VGS(V)
0
0 5 10 15 20
VGS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
BUK6226-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
7 of 14
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