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PDF BUK754R3-75C Data sheet ( Hoja de datos )
| Número de pieza | BUK754R3-75C | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK754R3-75C
N-channel TrenchMOS standard level FET
Rev. 02 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
Min Typ Max Unit
Tj ≥ 25 °C; Tj ≤ 175 °C
- - 75 V
VGS = 10 V; Tmb = 25 °C; [1][2] - - 100 A
see Figure 1; see Figure 4
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
- - 333 W
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 7;
see Figure 8
- 3.7 4.3 mΩ
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 100 A; Vsup ≤ 75 V;
drain-source avalanche RGS = 50 Ω; VGS = 10 V;
energy
Tj(init) = 25 °C; unclamped
- - 630 mJ
[1] Continuous current is limited by package.
[2] Refer to document 9397 750 12572 for further information.
1 page  
NXP Semiconductors
103
ID
(A)
102
10
1
10-1
10-1
Limit RDSon = VDS / ID
(1)
1
BUK754R3-75C
N-channel TrenchMOS standard level FET
003aab393
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
10
DC
VDS (V)
102
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK754R3-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK754R3-75C
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK754R3-75C v.2
Modifications:
20110421
Product data sheet
-
BUK75_7E4R3-75C v.1
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK754R3-75C separated from data sheet BUK75_7E4R3-75C v.1.
BUK75_7E4R3-75C v.1 20060810
Product data sheet
-
-
BUK754R3-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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