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Número de pieza | AP85T03GS | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP85T03GS (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP85T03GS/P
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching
▼ RoHS Compliant
G
D
S
BVDSS
RDS(ON)
ID
30V
6mΩ
75A
Description
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP85T03GP) is available for low-profile applications.
GD
S TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
Rating
30
±20
75
55
350
107
0.7
-55 to 175
-55 to 175
TO-220(P)
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
1.4
62
Units
℃/W
℃/W
Data & specifications subject to change without notice
200408052-1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AP85T03GS.PDF ] |
Número de pieza | Descripción | Fabricantes |
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AP85T03GH-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP85T03GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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