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BUK7E4R3-75C PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7E4R3-75C
기능 N-channel TrenchMOS standard level FET
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BUK7E4R3-75C 데이터시트, 핀배열, 회로
BUK7E4R3-75C
N-channel TrenchMOS standard level FET
Rev. 02 — 19 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
VGS = 10 V; Tmb = 25 °C; see Figure 1;
see Figure 4
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 7; see Figure 8
ID = 100 A; Vsup 75 V; RGS = 50 ;
VGS = 10 V; Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
[2] Refer to document 9397 750 12572 for further information.
Min Typ Max Unit
- - 75 V
[1][2] - - 100 A
- - 333 W
- 3.7 4.3 m
- - 630 mJ




BUK7E4R3-75C pdf, 반도체, 판매, 대치품
NXP Semiconductors
200
ID
(A)
150
003aab376
100
(1)
50
0
0 50 100 150 200
Tmb (°C)
BUK7E4R3-75C
N-channel TrenchMOS standard level FET
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
IAL
(A)
102
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aab385
(1)
(2)
10
1
10-3
10-2
10-1
(3)
1 10
tAL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time.
BUK7E4R3-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 April 2011
© NXP B.V. 2011. All rights reserved.
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BUK7E4R3-75C 전자부품, 판매, 대치품
NXP Semiconductors
BUK7E4R3-75C
N-channel TrenchMOS standard level FET
101
ID
(A)
102
103
104
105
106
0
03aa35
min typ max
246
VGS (V)
5
VGS(th)
(V)
4
3
2
1
0
60
0
max
typ
min
03aa32
60 120 180
Tj (°C)
Fig 5. Sub-threshold drain current as a function of
gate-source voltage
12
RDSon
(mΩ)
10
003aab378
8
6
4
Fig 6. Gate-source threshold voltage as a function of
junction temperature
2.4
a
03aa28
1.8
1.2
0.6
2
5 10 15 VGS (V) 20
0
60 0
60 120 180
Tj (°C)
Fig 7. Drain source on-state resistance as a function Fig 8. Normalized drain-source on-state resistance
of gate-source voltage; typical values
factor as a function of junction temperature
BUK7E4R3-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 April 2011
© NXP B.V. 2011. All rights reserved.
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BUK7E4R3-75C

N-channel TrenchMOS standard level FET

NXP Semiconductors
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