|
|
PDF BUK7Y53-100B Data sheet ( Hoja de datos )
| Número de pieza | BUK7Y53-100B | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BUK7Y53-100B (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
BUK7Y53-100B
N-channel TrenchMOS standard level FET
Rev. 3 — 13 October 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
Engine management
General purpose power switching
Solenoid drivers
Transmission control
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 10 A;
Tj = 25 °C; see Figure 12;
see Figure 13
Min Typ Max Unit
- - 100 V
- - 24.8 A
- - 85 W
- 40 53 mΩ
1 page  
NXP Semiconductors
BUK7Y53-100B
N-channel TrenchMOS standard level FET
103
ID (A)
102
10
1
10-1
10-1
Limit RDSon = VDS / ID
DC
1 10
003aad637
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
102
VDS (V)
103
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
Conditions
see Figure 5
Min Typ Max Unit
- - 1.76 K/W
10
Zth (j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
10-1
0.02
003aac482
P δ = tp
T
single shot
tp
T
t
10-2
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration.
BUK7Y53-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 13 October 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK7Y53-100B
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
BUK7Y53-100B v.3
Modifications:
20101013
Product data sheet
• Status changed from objective to product.
BUK7Y53-100B_2
20100211
Objective data sheet
Change notice
-
-
Supersedes
BUK7Y53-100B_2
BUK7Y53-100B_1
BUK7Y53-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 13 October 2010
© NXP B.V. 2010. All rights reserved.
11 of 14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BUK7Y53-100B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BUK7Y53-100B | N-channel TrenchMOS standard level FET | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |