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BUK7Y102-100B PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7Y102-100B
기능 N-channel TrenchMOS standard level FET
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BUK7Y102-100B 데이터시트, 핀배열, 회로
BUK7Y102-100B
N-channel TrenchMOS standard level FET
Rev. 03 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
General purpose power switching
Solenoid drivers
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 5 A;
Tj = 25 °C; see Figure 12;
see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 15 A; Vsup 100 V;
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge ID = 5 A; VDS = 80 V;
VGS = 10 V; see Figure 16
Min Typ Max Unit
- - 100 V
- - 15 A
- - 60 W
- 86 102 m
- - 35 mJ
- 4.7 - nC




BUK7Y102-100B pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7Y102-100B
N-channel TrenchMOS standard level FET
003aac523
20
ID
(A)
15
10
5
0
0 50 100 150 200
Tmb (°C)
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
102
IAL
(A)
10
1
10-1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac502
(1)
(2)
(3)
10-2
10-3
10-2
10-1
1 10
tAL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK7Y102-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
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BUK7Y102-100B 전자부품, 판매, 대치품
NXP Semiconductors
BUK7Y102-100B
N-channel TrenchMOS standard level FET
15
ID
(A)
10
5
0
0
20 10
12
003aad640
VGS (V) = 5.4
5.2
4.9
4.7
4.4
345
VDS (V)
500
RDSon
(mΩ)
400
4.4 4.7 4.9
003aad641
VGS (V) = 5.2
300
5.4
200
10
100
0
0 5 10 15
ID (A)
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values.
of drain current; typical values.
15
ID
(A)
10
003aad642
10
gfs
(S)
8
6
003aad647
5
Tj = 175°C
25 °C
4
2
0
0246
VGS (V)
0
0 4 8 12 16
ID (A)
Fig 8. Transfer characteristics: drain current as a
Fig 9. Forward transconductance as a function of
function of gate-source voltage; typical values.
drain current; typical values.
BUK7Y102-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
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BUK7Y102-100B

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

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