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부품번호 | BUK9Y153-100E 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BUK9Y153-100E
N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56
27 June 2014
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
• Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
• 12 V, 24 V and 48 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 2 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 2 A; VDS = 80 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 100 V
- - 9.4 A
- - 37 W
- 122 153 mΩ
- 3.1 - nC
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NXP Semiconductors
BUK9Y153-100E
N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56
102
ID
(A)
10
1
10-1
10-2
Limit RDSon = VDS / ID
DC
tp = 10 us
100 us
1 ms
10 ms
100 ms
003aai762
10-3
1
10 102
VDS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
103
10
IAL
(A)
1
10-1
003aai761
(1)
(2)
(3)
10-2
10-3
10-2
10-1
1
tAL (ms)
10
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min Typ Max Unit
- - 4.03 K/W
BUK9Y153-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
4 / 13
4페이지 NXP Semiconductors
BUK9Y153-100E
N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56
16
ID
(A)
12.8
9.6
6.4
003aai767
3
VGS(th)
(V)
2.5
2
1.5
1
max
typ
min
003aah025
Fig. 8.
3.2
175°C
Tj = 25°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VGS (V)
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
0.5
0
-60 0 60 120 180
Tj (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
10-1
ID
(A)
10-2
10-3
10-4
003aah026
min typ max
250
RDSon
(mΩ)
200
150
100
2.8 V
003aai770
3V
3.5 V
4.5 V
10 V
10-5
50
10-6
0123
VGS (V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
0 2 4 6 8 10
ID (A)
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK9Y153-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
7 / 13
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |