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부품번호 | BUK9K32-100E 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BUK9K32-100E
Dual N-channel 100 V, 33 mΩ logic level MOSFET
10 December 2013
Product data sheet
1. General description
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
• Dual MOSFET
• Q101 Compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
• 12 V, 24 V and 48 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics FET1 and FET2
RDSon
drain-source on-state VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics FET1 and FET2
QGD
gate-drain charge
ID = 5 A; VDS = 80 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 100 V
- - 26 A
- - 64 W
-
26.6 33
mΩ
- 11 - nC
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
102
IAL
(A)
10
BUK9K32-100E
Dual N-channel 100 V, 33 mΩ logic level MOSFET
003aal003
(1)
(2)
1
(3)
10-1
10-3
10-2
10-1
1
10
tAL (ms)
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
Limit RDSon = VDS / ID
10
1
10-1
003aal004
tp = 10 us
100 us
1 ms
DC 10 ms
100 ms
10-2
1
10 102
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
103
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
Minimum footprint; mounted on a
printed circuit board
BUK9K32-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 December 2013
Min Typ Max Unit
- - 2.36 K/W
- 95 - K/W
© NXP N.V. 2013. All rights reserved
4 / 13
4페이지 NXP Semiconductors
BUK9K32-100E
Dual N-channel 100 V, 33 mΩ logic level MOSFET
60
ID
(A)
50
40
30
20
003aal009
3
VGS(th)
(V)
2.5
2
1.5
1
max
typ
min
003aah025
Fig. 8.
10 175°C
Tj = 25°C
0
0 0.8 1.6 2.4 3.2 4
VGS (V)
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
0.5
0
-60 0 60 120 180
Tj (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
10-1
ID
(A)
10-2
10-3
10-4
003aah026
min typ max
50
RDSon
40
30
20
2.4 V
003aal010
2.6 V
2.8 V
3V
4.5 V
Vgs(V) = 10 V
10-5
10
10-6
0123
VGS (V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
0 5 10 15
Tj = 25 °C; tp = 300 μs
20 25
ID (A)
30
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK9K32-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 December 2013
© NXP N.V. 2013. All rights reserved
7 / 13
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |