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BUK7660-100A PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7660-100A
기능 N-channel TrenchMOS standard level FET
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BUK7660-100A 데이터시트, 핀배열, 회로
BUK7660-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 7 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Low conduction losses due to low
on-state resistance
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V, 24 V and 42 V loads
„ Automotive and general purpose
power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
Conditions
Tj 25 °C; Tj 175 °C
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 15 A;
Tj = 175 °C; see Figure 12;
see Figure 13
VGS = 10 V; ID = 15 A;
Tj = 25 °C; see Figure 12;
see Figure 13
ID = 20 A; Vsup 100 V;
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 100 V
- - 26 A
- - 106 W
- - 150 m
- 51 60 m
- - 110 mJ




BUK7660-100A pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7660-100A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
Conditions
see Figure 4
mounted on printed-circuit board ;
minimum footprint
Min Typ Max Unit
- - 1.4 K/W
- 50 - K/W
10
Zth(j-mb)
(K/W)
03nd05
1
δ = 0.5
0.2
0.1
101 0.05
0.02
102
106
Single Shot
105
104
103
P
tp
δ=
T
102
tp
T
t
101
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7660-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 February 2011
© NXP B.V. 2011. All rights reserved.
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BUK7660-100A 전자부품, 판매, 대치품
NXP Semiconductors
BUK7660-100A
N-channel TrenchMOS standard level FET
50
ID
(A)
40
30
20
10
0
0
03nc99
Tj = 175 °C
Tj = 25 °C
2 4 6 VGS (V) 8
10
VGS
(V)
8
03nc97
6
VDD = 14 V
4
VDD = 80 V
2
0
0 10 20 30 40
QG (nC)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source voltage as a function of turn-on
function of gate-source voltage; typical values
gate charge; typical values
5
VGS(th)
(V)
4
max
03aa32
140
RDSon
(mΩ)
120
03nd02
VGS (V) = 10
5.5 6 6.5
78
3 typ
2 min
100
80
1 60
0
60 0
60 120 180
Tj (°C)
40
0
20 40 60 80
ID (A)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
BUK7660-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 February 2011
© NXP B.V. 2011. All rights reserved.
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BUK7660-100A

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

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