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PDF BUK7675-100A Data sheet ( Hoja de datos )
| Número de pieza | BUK7675-100A | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7675-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 31 July 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1 and 3
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Static characteristics
ID = 14 A; Vsup ≤ 100 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 13 A;
Tj = 175 °C; see Figure 12
and 13
VGS = 10 V; ID = 13 A;
Tj = 25 °C; see Figure 12
and 13
Min Typ Max Unit
- - 100 V
- - 23 A
- - 99 W
- - 100 mJ
- - 187 mΩ
- 64 75 mΩ
1 page  
NXP Semiconductors
BUK7675-100A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 4
junction to mounting
base
thermal resistance from
junction to ambient
Min Typ Max Unit
- - 1.5 K/W
- 50 - K/W
10
Zth(j-mb)
(K/W)
03nb35
1
δ = 0.5
10−1
0.2
0.1
0.05
0.02
P
tp
δ=
T
Fig 4.
Single Shot
10−2
10−6
10−5
10−4
10−3
10−2
tp
T
t
10−1
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7675-100A_2
Product data sheet
Rev. 02 — 31 July 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
BUK7675-100A
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date Data sheet status
Change notice
Supersedes
BUK7675-100A_2
Modifications:
20090731
Product data sheet
-
BUK7575_7675-100A-01
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK7675-100A separated from data sheet BUK7575_7675-100A-01.
BUK7575_7675-100A-01 20001024
(9397 750 07623)
Product specification -
-
BUK7675-100A_2
Product data sheet
Rev. 02 — 31 July 2009
© NXP B.V. 2009. All rights reserved.
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