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BUK7675-100A PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7675-100A
기능 N-channel TrenchMOS standard level FET
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BUK7675-100A 데이터시트, 핀배열, 회로
BUK7675-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 31 July 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V, 24 V and 42 V loads
„ Automotive and general purpose
power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1 and 3
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Static characteristics
ID = 14 A; Vsup 100 V;
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 13 A;
Tj = 175 °C; see Figure 12
and 13
VGS = 10 V; ID = 13 A;
Tj = 25 °C; see Figure 12
and 13
Min Typ Max Unit
- - 100 V
- - 23 A
- - 99 W
- - 100 mJ
- - 187 m
- 64 75 m




BUK7675-100A pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7675-100A
N-channel TrenchMOS standard level FET
103
ID
(A)
102
RDSon = VDS/ID
10
D.C.
1
1 10
03nb34
P δ = tp
T
tp
T
tp = 10 us
100 us
1 ms
10 ms
100 ms
102
VDS (V)
t
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7675-100A_2
Product data sheet
Rev. 02 — 31 July 2009
© NXP B.V. 2009. All rights reserved.
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BUK7675-100A 전자부품, 판매, 대치품
NXP Semiconductors
BUK7675-100A
N-channel TrenchMOS standard level FET
60
ID
(A)
50
40
30
20
10
0
0
VGS (V) = 8
03nb31
9 10
20
7.5
6.5
5.5
4.5
2 4 6 8 10
VDS (V)
RDSon 90
(mΩ)
85
80
75
70
65
60
55
50
5
03nb30
10 15 20
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
101
ID
(A)
102
103
104
03aa35
min typ max
20
gfs
(S)
15
10
03nb28
105
5
106
0246
VGS (V)
0
0 10 20 30 40
ID (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7675-100A_2
Product data sheet
Rev. 02 — 31 July 2009
© NXP B.V. 2009. All rights reserved.
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부품번호상세설명 및 기능제조사
BUK7675-100A

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

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