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부품번호 | BUK7575-100A 기능 |
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기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BUK7575-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 30 July 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1 and 3
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Static characteristics
ID = 14 A; Vsup ≤ 100 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 13 A;
Tj = 175 °C; see Figure 12
and 13
VGS = 10 V; ID = 13 A;
Tj = 25 °C; see Figure 12
and 13
Min Typ Max Unit
- - 100 V
- - 23 A
- - 99 W
- - 100 mJ
- - 187 mΩ
- 64 75 mΩ
NXP Semiconductors
BUK7575-100A
N-channel TrenchMOS standard level FET
103
ID
(A)
102
RDSon = VDS/ID
10
D.C.
1
1 10
03nb34
P δ = tp
T
tp
T
tp = 10 us
100 us
1 ms
10 ms
100 ms
102
VDS (V)
t
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7575-100A_2
Product data sheet
Rev. 02 — 30 July 2009
© NXP B.V. 2009. All rights reserved.
4 of 13
4페이지 NXP Semiconductors
BUK7575-100A
N-channel TrenchMOS standard level FET
60
ID
(A)
50
40
30
20
10
0
0
VGS (V) = 8
03nb31
9 10
20
7.5
6.5
5.5
4.5
2 4 6 8 10
VDS (V)
RDSon 90
(mΩ)
85
80
75
70
65
60
55
50
5
03nb30
10 15 20
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10−1
ID
(A)
10−2
10−3
10−4
03aa35
min typ max
20
gfs
(S)
15
10
03nb28
10−5
5
10−6
0246
VGS (V)
0
0 10 20 30 40
ID (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7575-100A_2
Product data sheet
Rev. 02 — 30 July 2009
© NXP B.V. 2009. All rights reserved.
7 of 13
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BUK7575-100A | N-channel TrenchMOS standard level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |