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PDF PMZB950UPE Data sheet ( Hoja de datos )
| Número de pieza | PMZB950UPE | |
| Descripción | P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMZB950UPE
20 V, P-channel Trench MOSFET
28 July 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm
• ElectroStatic Discharge (ESD) protection > 1 kV HBM
• Drain-source on-state resistance RDSon = 1.02 Ω
3. Applications
• Relay driver
• High-speed line driver
• High-side load switch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -500 mA; Tj = 25 °C
[1]
Min Typ Max Unit
- - -20 V
-8 -
8V
- - -500 mA
- 1.02 1.4 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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1 page  
NXP Semiconductors
PMZB950UPE
20 V, P-channel Trench MOSFET
103 017aaa109
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1 0.05
0.02
0 0.01
10
10- 3
10- 2
FR4 PCB, standard footprint
10- 1
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa110
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5 0.33
0.25 0.2
0.1
0.05
0
0.02
0.01
10
10- 3
10- 2
10- 1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZB950UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 July 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 14
5 Page 
NXP Semiconductors
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
PMZB950UPE v.1
20140728
PMZB950UPE
20 V, P-channel Trench MOSFET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMZB950UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 July 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 14
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