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PDF NXS7002AK Data sheet ( Hoja de datos )
| Número de pieza | NXS7002AK | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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NXS7002AK
60 V, single N-channel Trench MOSFET
25 September 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
• Very fast switching
• Trench MOSFET technology
• ESD protected up to 400 V
1.3 Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tamb = 25 °C
- - 60 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1] - - 190 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C
resistance
- 35Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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NXP Semiconductors
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33 0.25
0.2
0.1
0.05
0.02
0.01 0
1
NXS7002AK
60 V, single N-channel Trench MOSFET
017aaa467
10-1
10-5
10-4
10-3
10-2
10-1
FR4 PCB, standard footprint
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33 0.25
0.2
0.1
0.05
10
0.01
0.02
0
017aaa468
1
10-1
10-5
10-4
10-3
10-2
FR4 PCB, mounting pad for drain 1 cm2
10-1
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 150 °C
NXS7002AK
All information provided in this document is subject to legal disclaimers.
Product data sheet
25 September 2012
Min Typ Max Unit
60 - - V
1.1 1.6 2.5 V
- - 1 µA
- - 10 µA
© NXP B.V. 2012. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
10. Soldering
3.3
2.9
1.9
NXS7002AK
60 V, single N-channel Trench MOSFET
3 1.7
2
0.7 0.6
(3×) (3×)
0.5
(3×)
0.6
(3×)
1
Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)
2.2
1.2
(2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot023_fr
1.4
(2×)
4.6 2.6
1.4
2.8
4.5
Fig. 20. Wave soldering footprint for TO-236AB (SOT23)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
sot023_fw
NXS7002AK
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 September 2012
© NXP B.V. 2012. All rights reserved
11 / 15
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