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| Número de pieza | NX3008PBKV | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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NX3008PBKV
30 V, 220 mA dual P-channel Trench MOSFET
Rev. 1 — 29 July 2011
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = -4.5 V; ID = -200 mA;
resistance
Tj = 25 °C
-
-8
[1] -
-
- -30 V
- 8V
- -220 mA
2.8 4.1 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
1 page  
NXP Semiconductors
NX3008PBKV
30 V, 220 mA dual P-channel Trench MOSFET
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per device
Rth(j-a)
thermal resistance from junction to ambient
Per transistor
Rth(j-a)
thermal resistance from junction to ambient
Conditions
in free air
in free air
Rth(j-sp)
thermal resistance from junction to solder point
Min Typ Max Unit
[1] - - 250 K/W
[1] - 330 380 K/W
[2] - 280 320 K/W
- - 115 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
10
0
0.02
0.01
017aaa064
1
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB; standard footprint
Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
NX3008PBKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
5 of 17
5 Page 
NXP Semiconductors
8. Test information
NX3008PBKV
30 V, 220 mA dual P-channel Trench MOSFET
P
t2
duty cycle δ =
t1
t2
t1
Fig 17. Duty cycle definition
t
006aaa812
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
NX3008PBKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
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