|
|
PDF PMV32UP Data sheet ( Hoja de datos )
| Número de pieza | PMV32UP | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PMV32UP (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
|
No Preview Available !
PMV32UP
20 V, 4 A P-channel Trench MOSFET
Rev. 1 — 11 March 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
1.8 V drain-source on-state resistance
rated
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj = 25 °C
voltage
VGS gate-source
voltage
ID drain current
Static characteristics
VGS = -4.5 V; Tamb = 25 °C
RDSon
drain-source
on-state
resistance
VGS = -4.5 V; ID = -2.4 A;
Tj = 25 °C
Min Typ Max Unit
- - -20 V
-8 -
8V
[1] - - -4 A
- 32 36 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
1 page  
NXP Semiconductors
PMV32UP
20 V, 4 A P-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
0.02
0 0.01
017aaa140
1
10–3
10–2
10–1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa141
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
0.02
0 0.01
1
10–1
10–2
10–1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV32UP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 March 2011
© NXP B.V. 2011. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
9. Soldering
3.3
2.9
1.9
PMV32UP
20 V, 4 A P-channel Trench MOSFET
3 1.7
2
0.7 0.6
(3×) (3×)
0.5
(3×)
0.6
(3×)
1
Fig 18. Reflow soldering footprint for SOT23 (TO-236AB)
2.2
1.2
(2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot023_fr
1.4
(2×)
4.6 2.6
1.4
2.8
4.5
Fig 19. Wave soldering footprint for SOT23 (TO-236AB)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
sot023_fw
PMV32UP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 March 2011
© NXP B.V. 2011. All rights reserved.
11 of 15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PMV32UP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PMV32UP | MOSFET ( Transistor ) | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |