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Número de pieza | PMV48XP | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
Rev. 1 — 21 December 2010
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Trench MOSFET technology
Very fast switching
1.3 Applications
High-side loadswitch
High-speed line driver
Relay driver
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source
Tamb = 25 °C
voltage
- - -20 V
VGS gate-source
voltage
-12 -
12 V
ID drain current
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = -4.5 V; Tamb = 25 °C
[1] -
VGS = -4.5 V; ID = -2.4 A;
pulsed; tp ≤ 300 µs; δ ≤ 0.01;
Tj = 25 °C
-
- -3.5 A
48 55 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
1 page NXP Semiconductors
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
0.02
0 0.01
017aaa126
1
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
017aaa127
0 0.02
0.01
1
10−3
10−2
10−1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV48XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 December 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page NXP Semiconductors
9. Soldering
3.3
2.9
1.9
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
3 1.7
2
0.7 0.6
(3×) (3×)
0.5
(3×)
0.6
(3×)
1
Fig 18. Reflow soldering footprint for SOT23 (TO-236AB)
2.2
1.2
(2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot023_fr
1.4
(2×)
4.6 2.6
1.4
2.8
4.5
Fig 19. Wave soldering footprint for SOT23 (TO-236AB)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
sot023_fw
PMV48XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 December 2010
© NXP B.V. 2010. All rights reserved.
11 of 15
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet PMV48XP.PDF ] |
Número de pieza | Descripción | Fabricantes |
PMV48XP | MOSFET ( Transistor ) | NXP Semiconductors |
PMV48XPA | P-channel Trench MOSFET | NXP Semiconductors |
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