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BD45422 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BD45422
기능 Counter Timer Built-in CMOS Voltage Detector IC
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BD45422 데이터시트, 핀배열, 회로
Datasheet
Voltage Detector IC Series
Counter Timer Built-in
CMOS Voltage Detector IC
BD45xxx series BD46xxx series
General Description
ROHM’s BD45xxx and BD46xxx series are highly
accurate, low current consumption Voltage Detector ICs.
Because the counter timer delay circuit is built into
these series, an external capacitor for the delay time
setting is unnecessary. The lineup was established with
low output types (Nch open drain and CMOS output)
and detection voltages range from 2.3V to 4.8V in
increments of 0.1V, so that the series may be selected
according the application at hand.
Features
„ Counter Timer Built-in
„ No delay time setting external capacitor required
„ Ultra-low current consumption
„ Two output types (Nch open drain and CMOS output)
„ Package SSOP5 is similar to SOT-23-5 (JEDEC)
Key Specifications
„ Detection voltage:
2.3V to 4.8V (Typ.)
„ High accuracy detection voltage:
„ Ultra-low current consumption:
„ Operating temperature range:
0.1V steps
±1.0%
0.85µA (Typ.)
-40°C to +105°C
„ Three internal, fixed delay time:
50ms
100ms
200ms
Package
SSOP5
2.90mm x 2.80mm x 1.25mm
Applications
Circuits using microcontrollers or logic circuits that
require a reset.
Typical Application Circuit
VDD1
VDD2
BD45xxx
RL
Micro
RST controller
CL
Noise-filtering
Capacitor
Open Drain Output Type
BD45xxx series
Connection Diagram
SSOP5
VDD
VOUT
GND
TOP VIEW
Marking
Lot. No
ER SUB GND
VDD1
BD46xxx
RST
Micro
controller
GND
CL
Noise-filtering
Capacitor
CMOS Output Type
BD46xxx series
Pin Descriptions
PIN No. Symbol
Function
1 ER Manual Reset
2
SUB
Substrate *
3
GND
GND
4
VOUT
Reset Output
5 VDD Power Supply Voltage
*Connect the substrate to GND.
Product structureSilicon monolithic integrated circuit
.www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product is not designed for protection against radioactive rays
1/13
TSZ02201-0R7R0G300010-1-2
15.Nov.2013 Rev.007




BD45422 pdf, 반도체, 판매, 대치품
BD45xxx series BD46xxx series
Datasheet
z Absolute maximum ratings
Parameter
Symbol
Limits
Power Supply Voltage
VDD-GND
-0.3 to +10
Output Voltage
Output Current
Nch Open Drain Output
CMOS Output
VOUT
IO
GND-0.3 to +10
GND-0.3 to VDD+0.3
60
ER pin Voltage
Power Dissipation
VCT
*1 *2 Pd
GND-0.3 to VDD+0.3
540
Operating Temperature
Topr -40 to +105
Ambient Storage Temperature
Tstg -55 to +125
*1 Reduced by 5.4mW/°C when used over 25°C.
*2 When mounted on ROHM standard circuit board (70mm×70mm×1.6mm, glass epoxy board).
Unit
V
V
mA
V
mW
°C
°C
Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C)
Parameter
Symbol
Condition
VDD=HÆL, RL=470k
*1
Detection Voltage
Detection Voltage
Temperature coefficient
Hysteresis Voltage
VDET
VDET/
T
VDET
VDET=2.5V
VDET=3.0V
VDET=3.3V
VDET=4.2V
VDET=4.8V
-40°C to +105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
VDDLÆHÆL, RL=470k
‘High’ Output
Delay time
tPLH
CL=100pF,
RL=100k
*1, *2, *3
BD45XX5, BD46XX5
BD45XX1, BD46XX1
BD45XX2, BD46XX2
VDD=VDET-0.2V, VER=0V VDET=2.3V to 3.1V
*1
Circuit Current
when ON
IDD1
VDD=VDET-0.2V, VER=0V VDET=2.3V to 3.1V
VDD=VDET-0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET-0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET-0.2V, VER=0V VDET=4.3V to 4.8V
*1
*1
VDD=VDET-0.2V, VER=0V VDET=4.3V to 4.8V
VDD=VDET+0.2V, VER=0V VDET=2.3V to 3.1V *1
Circuit Current
when OFF
IDD2
VDD=VDET+0.2V, VER=0V VDET=2.3V to 3.1V
VDD=VDET+0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET+0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET+0.2V, VER=0V VDET=4.3V to 4.8V
*1
*1
VDD=VDET+0.2V, VER=0V VDET=4.3V to 4.8V
VDET(T):Standard Detection Voltage (2.3V to 4.8V, 0.1V step)
RL :Pull-up resistor to be connected between VOUT and power supply.
CL :Capacitor to be connected between VOUT and GND.
*1 Guarantee is Ta=25°C.
*2 tPLH:VDD=(VDET(T)-0.5V)Æ(VDET(T)+0.5V)
*3 tPLH:VDD=Please set the rise up time between VDD=0ÆVDET to more than 100µs.
Attention: Please connect the GND when you don’t use ‘ER’
Min.
VDET(T)
×0.99
2.475
2.418
2.404
2.970
2.901
2.885
3.267
3.191
3.173
4.158
4.061
4.039
4.752
4.641
4.616
Limit
Typ.
VDET(T)
2.5
-
-
3.0
-
-
3.3
-
-
4.2
-
-
4.8
-
-
Max.
VDET(T)
×1.01
2.525
2.584
2.597
3.030
3.100
3.117
3.333
3.410
3.428
4.242
4.341
4.364
4.848
4.961
4.987
Unit
V
- ±100 ±360 ppm/°C
VDET(T)
×0.03
45
90
180
-
-
-
-
-
-
-
-
-
-
-
-
VDET(T)
×0.05
50
100
200
0.70
0.70
0.75
0.75
0.80
0.80
0.75
0.75
0.80
0.80
0.85
0.85
VDET(T)
×0.08
55
110
220
2.10
2.85
2.25
3.00
2.40
3.15
2.25
4.28
2.40
4.50
2.55
4.73
V
ms
µA
µA
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
4/13
TSZ02201-0R7R0G300010-1-2
15.Nov.2013 Rev.007

4페이지










BD45422 전자부품, 판매, 대치품
BD45xxx series BD46xxx series
Typical Performance Curves
2.0
BBDD4545228811G
1.5 BD46281
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 9 10
VDD SUPPLY VOLTAGE VDD[V]
Fig.3 Circuit Current
20
BBDD4466228811G
15 VDD=6.0V
10 VDD=4.8V
5
0
0 12 34 56
DRAIN-SOURCE VOLTAGE VDS[V]
Fig.5 “High” Output Current
Datasheet
20
BBDD4455228811G
15 BD46281
VD D = 2.4V
10
5
VD D = 1.2V
0
0.0 0.5 1.0 1.5 2.0 2.5
DRAIN-SOURCE VOLTAGE VDS[V]
Fig.4 “Low” Output Current
7
6 BDB4D524584121G
BD46281
5
4
3 Ta=25
2
1
Ta=25
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VDD SUPPLY VOLTAGE VDD[V]
Fig.6 I/O Characteristics
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
7/13
TSZ02201-0R7R0G300010-1-2
15.Nov.2013 Rev.007

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