|
|
|
부품번호 | BD46465 기능 |
|
|
기능 | Counter Timer Built-in CMOS Voltage Detector IC | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 16 페이지수
Datasheet
Voltage Detector IC Series
Counter Timer Built-in
CMOS Voltage Detector IC
BD45xxx series BD46xxx series
●General Description
ROHM’s BD45xxx and BD46xxx series are highly
accurate, low current consumption Voltage Detector ICs.
Because the counter timer delay circuit is built into
these series, an external capacitor for the delay time
setting is unnecessary. The lineup was established with
low output types (Nch open drain and CMOS output)
and detection voltages range from 2.3V to 4.8V in
increments of 0.1V, so that the series may be selected
according the application at hand.
●Features
Counter Timer Built-in
No delay time setting external capacitor required
Ultra-low current consumption
Two output types (Nch open drain and CMOS output)
Package SSOP5 is similar to SOT-23-5 (JEDEC)
●Key Specifications
Detection voltage:
2.3V to 4.8V (Typ.)
High accuracy detection voltage:
Ultra-low current consumption:
Operating temperature range:
0.1V steps
±1.0%
0.85µA (Typ.)
-40°C to +105°C
Three internal, fixed delay time:
50ms
100ms
200ms
●Package
SSOP5
2.90mm x 2.80mm x 1.25mm
●Applications
Circuits using microcontrollers or logic circuits that
require a reset.
●Typical Application Circuit
VDD1
VDD2
BD45xxx
RL
Micro
RST controller
CL
(Noise-filtering
Capacitor)
(Open Drain Output Type)
BD45xxx series
●Connection Diagram
SSOP5
VDD
VOUT
GND
TOP VIEW
Marking
Lot. No
ER SUB GND
VDD1
BD46xxx
RST
Micro
controller
GND
CL
(Noise-filtering
Capacitor)
(CMOS Output Type)
BD46xxx series
●Pin Descriptions
PIN No. Symbol
Function
1 ER Manual Reset
2
SUB
Substrate *
3
GND
GND
4
VOUT
Reset Output
5 VDD Power Supply Voltage
*Connect the substrate to GND.
○Product structure:Silicon monolithic integrated circuit
.www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product is not designed for protection against radioactive rays
1/13
TSZ02201-0R7R0G300010-1-2
15.Nov.2013 Rev.007
BD45xxx series BD46xxx series
Datasheet
z Absolute maximum ratings
Parameter
Symbol
Limits
Power Supply Voltage
VDD-GND
-0.3 to +10
Output Voltage
Output Current
Nch Open Drain Output
CMOS Output
VOUT
IO
GND-0.3 to +10
GND-0.3 to VDD+0.3
60
ER pin Voltage
Power Dissipation
VCT
*1 *2 Pd
GND-0.3 to VDD+0.3
540
Operating Temperature
Topr -40 to +105
Ambient Storage Temperature
Tstg -55 to +125
*1 Reduced by 5.4mW/°C when used over 25°C.
*2 When mounted on ROHM standard circuit board (70mm×70mm×1.6mm, glass epoxy board).
Unit
V
V
mA
V
mW
°C
°C
●Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C)
Parameter
Symbol
Condition
VDD=HÆL, RL=470kΩ
*1
Detection Voltage
Detection Voltage
Temperature coefficient
Hysteresis Voltage
VDET
VDET/
∆T
∆VDET
VDET=2.5V
VDET=3.0V
VDET=3.3V
VDET=4.2V
VDET=4.8V
-40°C to +105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
VDD=LÆHÆL, RL=470kΩ
‘High’ Output
Delay time
tPLH
CL=100pF,
RL=100kΩ
*1, *2, *3
BD45XX5, BD46XX5
BD45XX1, BD46XX1
BD45XX2, BD46XX2
VDD=VDET-0.2V, VER=0V VDET=2.3V to 3.1V
*1
Circuit Current
when ON
IDD1
VDD=VDET-0.2V, VER=0V VDET=2.3V to 3.1V
VDD=VDET-0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET-0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET-0.2V, VER=0V VDET=4.3V to 4.8V
*1
*1
VDD=VDET-0.2V, VER=0V VDET=4.3V to 4.8V
VDD=VDET+0.2V, VER=0V VDET=2.3V to 3.1V *1
Circuit Current
when OFF
IDD2
VDD=VDET+0.2V, VER=0V VDET=2.3V to 3.1V
VDD=VDET+0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET+0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET+0.2V, VER=0V VDET=4.3V to 4.8V
*1
*1
VDD=VDET+0.2V, VER=0V VDET=4.3V to 4.8V
VDET(T):Standard Detection Voltage (2.3V to 4.8V, 0.1V step)
RL :Pull-up resistor to be connected between VOUT and power supply.
CL :Capacitor to be connected between VOUT and GND.
*1 Guarantee is Ta=25°C.
*2 tPLH:VDD=(VDET(T)-0.5V)Æ(VDET(T)+0.5V)
*3 tPLH:VDD=Please set the rise up time between VDD=0ÆVDET to more than 100µs.
Attention: Please connect the GND when you don’t use ‘ER’
Min.
VDET(T)
×0.99
2.475
2.418
2.404
2.970
2.901
2.885
3.267
3.191
3.173
4.158
4.061
4.039
4.752
4.641
4.616
Limit
Typ.
VDET(T)
2.5
-
-
3.0
-
-
3.3
-
-
4.2
-
-
4.8
-
-
Max.
VDET(T)
×1.01
2.525
2.584
2.597
3.030
3.100
3.117
3.333
3.410
3.428
4.242
4.341
4.364
4.848
4.961
4.987
Unit
V
- ±100 ±360 ppm/°C
VDET(T)
×0.03
45
90
180
-
-
-
-
-
-
-
-
-
-
-
-
VDET(T)
×0.05
50
100
200
0.70
0.70
0.75
0.75
0.80
0.80
0.75
0.75
0.80
0.80
0.85
0.85
VDET(T)
×0.08
55
110
220
2.10
2.85
2.25
3.00
2.40
3.15
2.25
4.28
2.40
4.50
2.55
4.73
V
ms
µA
µA
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
4/13
TSZ02201-0R7R0G300010-1-2
15.Nov.2013 Rev.007
4페이지 BD45xxx series BD46xxx series
●Typical Performance Curves
2.0
【B【BDD4545228811】G】
1.5 【BD46281】
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 9 10
VDD SUPPLY VOLTAGE :VDD[V]
Fig.3 Circuit Current
20
【【BBDD4466228811】G】
15 VDD=6.0V
10 VDD=4.8V
5
0
0 12 34 56
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.5 “High” Output Current
Datasheet
20
【【BBDD4455228811】G】
15 【BD46281】
VD D = 2.4V
10
5
VD D = 1.2V
0
0.0 0.5 1.0 1.5 2.0 2.5
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.4 “Low” Output Current
7
6 【B【DB4D52458412】1G】
【BD46281】
5
4
3 Ta=25℃
2
1
Ta=25℃
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VDD SUPPLY VOLTAGE :VDD[V]
Fig.6 I/O Characteristics
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
7/13
TSZ02201-0R7R0G300010-1-2
15.Nov.2013 Rev.007
7페이지 | |||
구 성 | 총 16 페이지수 | ||
다운로드 | [ BD46465.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BD46461G | VOLTAGE DETECTOR IC | ROHM Semiconductor |
BD46462 | Counter Timer Built-in CMOS Voltage Detector IC | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |