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PDF TPCF8004 Data sheet ( Hoja de datos )
| Número de pieza | TPCF8004 | |
| Descripción | MOSFETs | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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MOSFETs Silicon N-Channel MOS (U-MOS)
TPCF8004
1. Applications
• Lithium-Ion Secondary Batteries
2. Features
(1) Small footprint due to a small and thin package
(2) Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 10 V)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
TPCF8004
1, 2, 3, 6, 7, 8: Drain
4: Gate
5: Source
VS-8
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 30 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
7A
Drain current (pulsed)
(Note 1)
IDP
28
Power dissipation
(t = 5 s)
(Note 2)
PD
2.5 W
Power dissipation
(t = 5 s)
(Note 3)
PD
0.7 W
Single-pulse avalanche energy
(Note 4)
EAS
31 mJ
Avalanche current
IAR 7 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2012-08-28
Rev.1.0
1 page  
8. Characteristics Curves (Note)
TPCF8004
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
5 2012-08-28
Rev.1.0
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TPCF8004.PDF ] | |
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